Journal Proceedings

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Journal Proceedings 2009

N. G. Rudawski and K. S. Jones, "Atomistic considerations of stressed epitaxial growth from the solid phase," Scripta Materialia, 61 (2009) 327–330.

N. G. Rudawski, K. S. Jones, S. Morarka, M. E. Law, and R. G. Elliman, "Stressed multidirectional solid-phase epitaxial growth of Si," Journal of Applied Physics, 105, 081101, 2009.

S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, "Modeling two-dimensional solid-phase epitaxial regrowth using level set methods," Journal of Applied Physics 105, 053701 2009

N. G. Rudawski, K. S. Jones, R. Gwilliam, "Stressed solid-phase epitaxial growth of (011) Si," Journal of Magnetic Resonance, Vol. 24, No. 2, 305-309, DOI:10.1557/JMR.2009.0056

 

Journal Proceedings 2008

N. G. Rudawski, K. S. Jones, R. Gwilliam, "Dopant-stress synergy in Si solid-phase epitaxy," Applied Physics Letters, 92, 232110 (2008).

N. G. Rudawski, K. S. Jones, R. Gwilliam, "Stressed Solid-Phase Epitaxial Growth of Ion-Implanted Amorphous Silicon," Materials Science and Engineering R: Reports, Volume 46, pp. 40-58.

N. G. Rudawski, K. S. Jones, R. Gwilliam, "Kinetics and Morphological Instabilities of Stressed Solid-Solid Phase Transformations," Physical Review Letters, PRL 100.165501 (2008)

D. P. Hickey, Z. L. Bryan, K. S. Jones, R. G. Elliman, E. E. Haller, "Defects in Ge and Si caused by 1  MeV Si+ implantation," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, January 2008, Volume 26, Issue 1, pp. 425-429.

S. Morarka, N. G. Rudawski, M. E. Law, "Level set modeling of the orientation dependence of solid phase epitaxial regrowth," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, January 2008, Volume 26, Issue 1, pp. 357-361.

N. G. Rudawski, K. S. Jones, R. G. Elliman, "Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, January 2008, Volume 26, Issue 1, pp. 435-438.

 

Journal Proceedings 2007

N. G. Rudawski, K. S. Jones, R. Gwilliam, "Solid phase epitaxy in uniaxially stressed (001) Si," Appl. Phys. Lett. 91, 172103 (2007).

D. Gostovic, J. R. Smith, D. P. Kundinger, K. S. Jones, and E. D. Wachsman, "Three-Dimensional Reconstruction of Porous LSCF Cathodes", Electrochemical and Solid-State Letters, 10 (12) B214-B217, (2007).

K. Thompson, J.H. Bunton, J.S. Moore and K.S. Jones, "Compositional analysis of Si nanostructures: SIMS-3D tomographic atom probe comparison," Semiconductor Science and Technology, 22, S127-S131 (2007).

J. R. Smith, A. Chen, D. Gostovic, D. Hickey, D. Kundinger, K. L. Duncan, R. T. DeHoff, K. S. Jones and E. D. Wachsman, “Evaluation of the Relationship Between Cathode Microstructure and Electrochemical Behavior for SOFCs,” Solid State Ionics (Submitted March 2007).

N. Burbure, N.G. Rudawski, and K.S. Jones, “Effect of Oxide on Trench Edge Defect Formation in Ion-Implanted Silicon,” The Electrochemical Society, Vol. 10, Issue 6, pg. H184-H185 (2007).

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Journal Proceedings 2006

M.S. Phen, V. Craciun, K.S. Jones, J.L. Hansen and A.N. Larsen, "HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1-xGex," Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 253, Issue 1-2, pg. 22-26, December 2006.

N.G. Rudawski, K.N. Siebein, and K.S. Jones, "Effect of uniaxial stress on solid phase epitaxy in patterned Si wafers," Applied Physics Letters, 89, 082107, 1-3, Aug. 25, 2006.

Ji-Song Lim, Xiaodong Yang, Toshikazu Nishida and Scott E. Thompson, "Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect tansistors under mechanical stress," Applied Physics Letters, 89, 073509, 1-3, August 14, 2006.

D.P. Hickey, E. Kuryliw, K. Siebein, K.S. Jones, R. Chodelka, and R. Elliman, "Cross-sectional transmission electron microscopy method and studies of implant damage in single crystal diamond," J. Vac. Sci. Technol. A 24(4) pp. 1302-1307, June 22, 2006.

X. Yang, J. Lim, G. Sun, K. Wu, T. Nishida, and S.E. Thompson, "Strain-induced changes in the gate tunneling currents in p-channel metal-oxide-semiconductor field-effect transistors," Applied Physics Letters 88, 052108, Jan. 31, 2006.

R.A. Camillo-Castillo, Mark E. Law, Kevin S. Jones, Ljubo Radic, R. Lindsay, and S. McCoy, "Kinetics of the end of range damage dissolution in flash-assist rapid thermal processing," Applied Physics Letters 88, 232104, June 5, 2006.

R.A. Camillo-Castillo, M.E. Law, K.S. Jones, R. Lindsay, K. Maex, B.J. Pawlak and S. McCoy, "Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals," J. Vac. Sci. Technol. B 24(1), 450-455, Jan/Feb 2006.

C.R. Olson, E. Kuryliw, B.E. Jones, and K.S. Jones, "Effect of stress on the evolution of mask-edge defects in ion-implanted silicon," J. Vac. Sci. Technol. B 24(1), 446-449, Jan/Feb 2006.

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Journal Proceedings 2005

B.E. Jones, K.S. Jones, K.J. Rambo, V.A. Rakov, J. Jerald, and M.A. Uman, "Oxide reduction during triggered-lightning fulgurite formation," J. of Atmospheric & Solar-Terrestrial Physics 67(4), pg. 423-428, 2005.

R.T. Crosby, K.S. Jones, M. E. Law, L. Radic, P.E. Thompson and J. Liu, "Dislocation loops in silicon-germanium alloys: The source of interstitials," Appl. Phys. Lett. 87, pg.1-3, 2005.

Mark H. Clark and Kevin S. Jones, "Strain compensation in boron-indium coimplanted laser thermal processed silicon," J. Appl. Phys. 97, 093525, 2005.

J.M. Jacques, K.S. Jones, L.S. Robertson, A. Li-Fatou, C.M. Hazelton, E. Napolitani and L.M. Rubin, "Fluorine-enhanced boron diffusion in germanium-preamorphized silicon," J. Appl. Phys. 98, 073521, 2005.

K.A. Gable, L.S. Robertson, Amitabh Jain, and K.S. Jones, "The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon," J. Appl. Phys. 97, 044501, 2005.

A. El Kouche, J. Lin, M.E. Law, S. Kim, B.S. Kim, F. Ren, and S. Pearton, "Remote Sensing System for Hydrogen using GaN Schottky Diodes," Sensors & Actuators B: Chemical, Vol. 105(2) p. 329-333, 2005.

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Journal Proceedings 2004

P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison & M. E. Law, "Observation of fluorine-vacancy complexes in silicon," Appl. Phys. Lett. 85(9), 1538-1540, 2004.

R.A. Camillo-Castillo, M.E. Law, and K.S. Jones, "Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon," Materials Science & Engineering B 114-115, 312-317, 2004.

R.A. Camillo-Castillo, M.E. Law, and K.S. Jones, "Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles," J. Appl. Phys 96, 4939 2004.

R.A. Camillo-Castillo, M.E. Law, K.S. Jones and L.M. Rubin, "Influence of low temperature preanneals on dopant and defect behavior for low energy Ge preamorphized silicon," J. Vac. Sci. Technol. B 22(1) 2004 p. 312-316.

K. Krishnaswami, S.R. Vangala, B. Zhu, W.D. Goodhue, L.P. Allen, C. Santeufemio, X. Liu, M.C. Ospina, J. Whitten, C. Sung, H. Dauplaise, D. Bliss, G. Dallas, D. Bakken, and K.S. Jones, "Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy," J. Vac. Sci. Technol. B 22(3) 2004 p. 1455-1459.

A.F. Saavedra, K.S. Jones, M.E. Law, and K.K. Chan, "Kinetics of {311} Defect Dissolution in Silicon-on-Insulator (SOI)," Mat. Sci. and Eng. B 107(2) 2004 p. 198-203.

A.F. Saavedra, K.S. Jones, M.E. Law, and K.K. Chan, "Comparison of {311} Defect Evolution in SIMOX and Bonded SOI Materials," J. Electrochem. Soc. 151(4), 2004 p. G266-G270.

I. Avci, M.E. Law, E. Kuryliw, A.F. Saavedra, and K.S. Jones, "Modeling Extended Defect ({311} and Dislocation Loop) Nucleation and Evolution in Silicon," J. Appl. Phys. 95(5), 2004 p. 2452-2460.

A.F. Saavedra, A.C. King, K.S. Jones, and E.C. Jones, "Secondary Defect Formation in Bonded Silicon-on-Insulator (SOI) after Boron Implantation," J. Vac. Sci. Tech. B 22(1), 2004 p. 459-462.

R. Crosby , K.S. Jones, M.E. Law A.N. Larsen and J.L. Hansen, "{311} Defect Evolution in Ion-implanted, Relaxed SiGe," J. Vac. Sci. Tech B, 22(1) 2004 p. 468-470.

R.T. Crosby, K.S. Jones, M.E. Law, A.N. Larsen, and J.L. Hansen, "{311} Defect evolution in Si-implanted Si1-xGex alloys," Mat. Sci. Semic. Proc. 6(4) 2004 p. 205-208.

A.F. Saavedra, A.C. King, K.S. Jones, and E.C. Jones, "Electrical Activation in Silicon-on-Insulator (SOI) after Low Energy Boron Implantation," J. Appl. Phys. , 96(4) 2004 p. 1891-1898.

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Journal Proceedings 2003

Lin Jiang, Sheng S. Li, Nien-Tze Yeh, Jen-Inn Chyi, C.E. Ross and K.S. Jones, "In0.6Ga0.4As/GaAs Quantum-dot Infrared Photodetector with Operating Temperature up to 260 K," Appl. Phys. Lett., 82(12), 1986-88, March 24, 2003.

A.C. King, A.F. Gutierrez, A.F. Saavedra, K.S. Jones, and D.F. Downey, "Defect Evolution of Low Energy, Amorphizing Germanium Implants in Silicon," Journal of Applied Physics, 93(5) p. 2449-2452, March 1, 2003.

F.C. Hou, G. Bosman, M.E. Law, "Simulation of Oxide Trapping Noise in Submicron N-Channel MOSFET", IEEE Transactions on Electron Devices, 50(3), p. 846-852, March, 2003.

L.S. Adam, C. Bowen, M.E. Law, "On implant-based multiple gate oxide schemes for system-on-chip integration," IEEE Transactions on Electron Devices, 50(3), p. 589-600, March, 2003.

Z. Insepov, L.P. Allen, C. Santeufemio, K.S. Jones, and I. Yamada, "Computer Modeling and Electron Microscopy of Silicon Surfaces Irradiated by Cluster Ion Impacts," Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, Vol. 202, April 2003, pages 261-268.

J.E. Sanchez, G. Bosman, M.E. Law, "Two-Dimensional Semiconductor Device Simulation of Trap-Assisted Generation-Recombination Noise under Periodic Large-Signal Conditions and Its Use for Developing Cyclostationary Circuit Simulation Models", IEEE Transactions on Electron Devices, 50(5), p. 1353-62, May, 2003.

J. M. Jacques L. S. Robertson, K. S. Jones, M. E. Law, M. J. Rendon, and J. Bennett, "Fluorine-Enhanced Boron Diffusion in Amorphous Silicon," Applied Physics Letters Vol. 82, No. 20, Pg. 3469-3471 (2003).

Z. Insepov, L.P. Allen, C. Santeufemio, K.S. Jones, and I. Yamada, "Crater Formation and Sputtering by Cluster Impacts," Nuclear Instruments and Methods in Physics Research B 206, 846-850 (2003).

Robert T. Crosby, Kevin S. Jones, Mark E. Law, A. Nylandsted Larsen & J. Lundsgaard Hansen, "{311} Defect evolution in Si-Implanted Si1-xGex alloys," Materials Science in Semiconductor Processing 6(4), 205-208, 2003.

L.P. Allen, T.G. Tetreault, C. Santeufemio, X. Li, W.D. Goodhue, D. Bliss, M. Tabat, K.S. Jones, G. Dallas, D. Bakkan, and C. Sung, "Gas Cluster Ion Beam Smoothing of Chemo-Mechanical Polish Processed GaSb(100) Substrates", Journal of Electronic Materials, Vol. 32, No.8, 2003, p.842.

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Journal Proceedings 2002

L.S. Adam, M.E. Law, O. Dokumaci, S. Hegde, "Physical Integrated Diffusion-Oxidation Model for Implanted Nitrogen in Silicon", Journal of Applied Physics, 91(4), p. 1894-1900, Feb. 15, 2002.

M.E. Law, "Process Modeling for Future Technologies," IBM Journal of Research and Development, 46(2/3), 339-346, April/May 2002.

S.K. Earles, M.E. Law, R. Brindos, K.S. Jones, S. Talwar, S. Corcoran, "Nonmelt Laser Annealing of 5-keV and 1-keV Boron-Implanted Silicon," IEEE Transactions on Electron Devices, 49(7), p. 1118-23, July 2002.

L. Radic, A.D. Lilak, M.E. Law, "Dependence of Boron Cluster Dissolution on the Annealing Ambient,"Applied Physics Letters, 81(5), p. 826-8, July 29, 2002.

A.D. Lilak, M.E. Law, L. Radic, K.S. Jones, M. Clark, "Kinetics of Boron Reactivation in Doped Silicon from Hall Effect and Spreading Resistance Techniques," Appl. Phys. Lett., 81(12), p. 2244-6, Sept. 16, 2002.

M.H. Clark, K.S. Jones and F.A.Stevie, Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon," Journal of Vacuum Science Technology A, 20(5), p. 1663-1666 (Sep/Oct 2002).

L. P. Allen, Z. Insepov, D.B. Fenner, C. Santeufemio, W. Brooks, K.S. Jones and I. Yamada, "Craters on silicon surfaces created by gas cluster ion impacts," J. Appl. Phys., 92(7) p. 3671-3678, October 1, 2002.

F.C. Hou, G. Bosman, M.E. Law, "Maximum Allowable Bulk Defect Density for Generation-Recombination Noise-Free Device Operation", IEEE Transactions on Electron Devices, 49(11), p. 2080-2, November, 2002.

A.F. Saavedra, J. Frazier, K.S. Jones, I.Avci, S.K. Earles, M.E. Law, E.C. Jones, "Influence of the Surface Si/Buried Oxide on Extended Defect Evolution in Silicon On-Insulator Scaled to 300Å", J. Vacuum Science Technology B 20(6), p. 2243-2247, Nov/Dec 2002.

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Journal Proceedings 2001

L.S. Adam, M.E. Law, S. Szpala, P.J. Simpson, D. Lawther, O. Dokumaci, S. Hegde, "Experimental Identification of Nitrogen-Vacancy Complexes in Nitrogen Implanted Silicon, Applied Physics Letters, 79(5), p. 623-5, July 2001.

Michelle Griglione, Timothy J. Anderson, Mark E. Law, Kevin S. Jones, Alex van den Bogaard and Margarida Puga-Lambers, "Diffusion of Single Quantum Well Si1-xGex/Si Layers Under Vacancy Supersaturation," J. Appl. Phys., 89(5), 2904-2906, 2001.

K.S. Jones, Craig Jasper and Allen Hoover, "Effect of Annealing Time and Temperature on the Formation of Threading and Projected Range Dislocations in 1 MeV Boron Implanted Si," Appl. Phys. Lett., 78(12), 1664-1666, 2001.

Craig Jasper, Suman K, Banerjee, Allen Hoover and Kevin S. Jones, "Threading Dislocation Evolution in Mega-Electron-Volt Phosphorus Implanted Silicon," J. Appl. Phys., 89(8), 4326-4331, 2001.

Heather Banisaukas, Kevin S. Jones, Somit Talwar, Dan F. Downey and Scott Falk, "Varying Implant Dose Rate for Defect Reduction in Laser Thermal Processing," Materials Science in Semiconductor Processing 4(4), 339-343, 2001.

D.B. Fenner, J.I. Hautala, L.P. Allen, T.G. Tetreault, A. Al-Jibouri, J.I. Budnick and K.S. Jones, "Surface Processing with Gas-Cluster Ions to Improve Giant Magnetoresistance Films," J. Vac. Sci. Technol. A, 19(4), 1207-1212, 2001.

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Journal Proceedings 2000

F.C. Hou, G. Bosman, M.E. Law, "Characterization of Generation-Recombination Noise Using a Physics Based Device Noise Simulator", Microelectronics Reliabilty, 40(11), p. 1883-6, Nov. 2000.

Y. Haddara, B.T. Folmer, M.E. Law, T. Buyuklimanli, "Accurate Measurements of the Intrinsic Diffusivities of Boron and Phosphorus in Silicon", Applied Physics Letters, 77(13), p.1976-8, September 25, 2000.

M.E. Law, G.H. Gilmer, and M. Jarai, "Simulation of Defects and Diffusion Phenomena in Silicon," MRS Bulletin, 25(6), p. 45-50, June, 2000.

Lahir Shaik Adam, Mark E. Law, Kevin S. Jones, Omer Dokumaci, C.S. Murthy and Suri Hegde, "Diffusion of Implanted Nitrogen in Silicon," J. Appl. Phys., 87(5), 2282-2286, 2000.

D.A. Cole, J.R. Shallenberger, S.W. Novak, R.L. Moore, M.J. Edgell, S.P. Smith, C.J. Hitzman, J.F. Kirchhoff, E. Principe, W. Nieveen, F.K. Huang, S. Biswas, R.J. Bleiler, K. Jones, "SiO2 Thickness Determination by X-ray Photoelectron Spectroscopy, Auger Electron Spectroscopy, Secondary Ion Mass Spectrometry, Rutherford Backscattering, Transmission Electron Microscopy, and Ellipsometry," J. Vac. Sci. Technol. B, 18(1), p. 440-444, Jan/Feb 2000.

Karen E. Waldrip, M.R. Davidson, J.H. Lee, B. Pathangey, M. Puga-Lambers, K.S. Jones, P.H. Holloway, S.S. Sun and C.N. King, "Comparison of the Microstructure and Electroluminescent Properties of ZnS:Mn Atomic Layer Epitaxy," Display and Imaging, Vol. 8 suppl. 73, 2000.

L.S. Robertson, K.S. Jones, L.M. Rubin and J. Jackson, "Annealing Kinetics of {311} Defects and Dislocation Loops in the End-of-Range Damage Region of Ion Implanted Silicon," J. Appl. Phys., 87(6), 2910-2913, 2000.

Hugo Saleh, Mark E. Law, Sushil Bharatan, Kevin S. Jones, Viswanath Krishnamoorthy and Temel Buyuklimanli, "Energy Dependence of Transient Enhanced Diffusion and Defect Kinetics," Appl. Phys. Lett., 77(1), 112-114, 2000.

Michelle Griglione, Timothy J. Anderson, Yaser M. Haddara, Mark E. Law, Kevin S. Jones, and Anex van den Bogaard, "Diffusion of Ge in Si1-xGex/Si Single Quantum Wells in Inert and Oxidizing Ambients," J. Appl. Phys., 88(3), 1366-1372, 2000.

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Journal Proceedings 1999

R. Raman, M.E. Law, V. Krishnamoorthy, K.S. Jones and S.B. Herner, "Effect of Surface Proximity on End-of-Range Loop Dissolution in Silicon," Appl. Phys. Lett., 74(11), 1591-1593, 1999.

R. Raman, M. E. Law, V. Krishnamoorthy and K. S. Jones, "Effect of the End-of-Range Loop Layer Depth on the Evolution of {311} Defects," Appl. Phys. Lett., 74(5), 700-702, 1999.

A.D. Lilak, S.K. Earles, M.E. Law and K.S. Jones, "Evolution of {311} Type Defects in Boron-Doped Structures: Experimental Evidence of Boron-Interstitial Cluster Formation," Appl. Phys. Lett., 74(14), 2038-2040, 1999.

R. Brindos, P.H. Keys, K.S. Jones, "Ion Implantation Range Theory, Properties of Crystalline Silicon," EMIS Datareviews 14.1 Series no. 20, 773, 1999.

P.H. Keys, R.E. Brindos, K.S. Jones, "Dopant Ionization Energies in c-Si, Properties of Crystalline Silicon," EMIS Datareviews 14.6 Series no. 20, 773, 1999.

R.E. Brindos, P.H. Keys, K.S. Jones and M.E. Law, "Effect of Arsenic Doping on {311} Defect Dissolution in Silicon," Appl. Phys. Lett., 75(2), 229-231, 1999.

K.E. Waldrip, M.R. Davidson, J.H. Lee, B. Pathangey, M. Puga-Lambers, K.S. Jones, P.H. Holloway, S.S. Sun and C.N. King, "Comparison of the Microstructure and Electroluminscent Properties of ZnS:Mn Deposited by Sputtering and Atomic Layer Epitaxy," Display and Imaging, Vol 8 suppl., 59-68, 1999.

Craig Jasper, Allen Hoover, Kevin S. Jones, "The effect of Implantation, Energy, and Dose on Extended Defect Formation for MeV Phosphorus Implanted Silicon," Appl. Phys. Lett., 75(17), 2629-31, 1999.

Kevin S. Jones, Heather Banisaukas, Josh Glassberg, Ebrahim Andideh, Craig Jasper, Allen Hoover, Aditya Agarwal and Mike Rendon, "Transient Enhanced Diffusion after Laser Thermal Processing of Ion Implanted Silicon," Appl. Phys. Lett., 75(23), 3659-3661, 1999.

L.S. Robertson, M.E. Law, K.S. Jones, L.M. Rubin, J. Jackson, P. Chi, and D.S. Simmons, "Correlation of End-of-Range Damage Evolution and Transient Enhanced Diffusion of Boron in Regrown Silicon," Appl. Phys. Lett., 75(24), 3844-3846, 1999.

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Journal Proceedings 1998

Mark E. Law and Stephen Cea, "Continuum Based Modeling of Silicon Integrated Circuit Processing: An Object Oriented Approach," Computational Materials Science, 12(4), p. 289-308, November, 1998.

Ming-Yeh Chuang, K.K. O, and M.E. Law, "Three-Dimensional Base Distributed Effects of Long Stripe BJT Base Resistance at A.C.," IEEE Transactions on Electron Devices, September, 1998, p.1993-2001.

Ming-Yeh Chuang, K.K. O, and M.E. Law, "Three-Dimensional Base Distributed Effects of Long Stripe BJT Base Resistance at D.C.," IEEE Transactions on Electron Devices, 45(2), p. 439-446, February, 1998.

S. B. Herner, H.J. Gossmann, F. H. Baumann, G. H. Gilmer, and D. C. Jacobson, K. S. Jones, "Capture of Vacancies by Extrinsic Dislocation Loops in Silicon," Appl. Phys. Lett., 72 (1), 67-69,1998.

K. Moller, M. E. Law and K. S. Jones, "Cross-Sectional Transmission Electron Microscopy Analysis of {311} Defects from Silicon Implantation Into Silicon," Appl. Phys. Lett., 72 (20), 2547-2549, 1998.

Jing-Hong Li and Kevin S. Jones, "{311} Defects in Silicon: The Source of the Loops," Appl. Phys. Lett., 73(25), 3748-3750, 1998.

Jong-Hong Li, Mark E. Law, Craig Jasper, and Kevin S. Jones, "The Effect of TEM Sample Thickness on Nucleation and Growth and Dissolution of {311} Defects in Si+ Implanted Si," Materials Science in Semiconductor Processing, 1(2), 99-106, 1998.

Daniel F. Downey, Judy W. Chow, Emi Ishida and Kevin S. Jones, "Effect of Fluorine on the Diffusion of Boron in Ion Implanted Si", Appl. Phys. Lett., 73 (9), 1263-1265, 1998.

M.E. Law, Y. M. Haddara and K.S. Jones, "Effect of the Silicon/Oxide Interface on Interstitials: Di-interstitial Recombination", J. Appl. Phys., 84 (7), 3555-3560, 1998.

V. Krishnamoorthy, K. Moller, K.S. Jones, D. Venables, J. Jackson and L. Rubin, "Transient Enhanced Diffusion andDefect Microstructure in High Dose, Low Energy As+ Implanted Si", J. Appl. Phys., 84 (11), 5997-6002, 1998.

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Journal Proceedings 1997

Ming-Yeh Chuang and M.E. Law, "A New Algorithm for Faster Full-Thermodynamic Device Simulations," IEEE Transactions on Electron Devices, 44(9), p. 1567-1570, September, 1997.

S. Chaudhry and M.E. Law, "The Stress Assisted Evolution of Point and Extended Defects in Silicon", Journal of Applied Physics, 82(3), p. 1138-1146, Aug. 15, 1997.

E. Chason, S.T. Picraux, J.M. Poate, J.O. Borland, M.I. Current, T. Diaz De La Rubia, D.J. Eaglesham, O.W. Holland, M.E. Law, C.W. Magee, J.W. Mayer, J. Melngailis, A.F. Tasch, "Ion Beams in Silicon Processing and Characterization", Journal of Applied Physics, 81(10), p. 6513-6561, May 15, 1997.

J. Liu, V. Krishnamoorthy, H.-J. Gossman, L. Rubin, M.E. Law, K.S. Jones, "The Effect of Boron Implant Energy on Transient Enhanced Diffusion in Silicon", Journal of Applied Physics, 81(4), p. 1656-1660, Feb. 15, 1997.

J. Xu, V. Krishnamoorthy, K.S. Jones, and M.E. Law, "A Comparison of Boron and Phosphorus Diffusion and Dislocation Loop Growth from Silicon Implants into Silicon," J. Appl. Phys., 81 (1), 107-111, 1997.

K.S. Jones, K. Moller, J. Chen, M. Puga-Lambers, B. Freer, J. Berstein and L. Rubin, "Effect of Implant Temperature on Transient Enhanced Diffusion of Boron Regrown Silicon after Amorphization by Si+ or Ge+ Implantation," J. Appl. Phys., 81(9), 6051-6055, 1997.

S.B. Herner, V. Krishnamoorthy, K.S. Jones, T.K. Mogi, M.O. Thompson, and H.-J. Gossmann, "Extrinsic Dislocation Loop Behavior in Silicon With a Thermally Grown Silicon Nitride Film," J. Appl. Phys., 81(11), 7175-7180, 1997.

S.B. Herner and K.S. Jones, "Investigation of Mechanisms of Vacancy Generation in Silicon in the Presence of a TiSi2 Film," J. Appl. Phys., 82(2), 583-588, 1997.

K.S. Jones, J. Chen, S. Bharatan, J. Jackson, L Rubin, M. Puga-Lambers and D. Venables "The Effect of Dose Rate and Implant Temperature on Transient Enhanced Diffusion in Boron Implanted Silicon," J. Electron. Materials, 26, 1361, 1997.

S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren, K. Jones, and M. Cole, "InN-based Ohmic Contacts to InAIN," Appl. Phys. Lett., 70(19), p. 2592-2594, 1997.

L.S. Robertson, K.S. Jones, A. Lilak, M.E. Law, P.S. Kringhoj, L.M. Rubin, J. Jackson, D.S. Simons and P. Chi, "The Effect of Dose Rate on Interstitial Release from the End of Range Implant Damage Region in Si," Appl. Phys. Lett., 71(21), p. 3105-3107, 1997.

S.B. Herner, V. Krishnamoorthy, A. Naman, K.S. Jones, H.-J. Gossmann, and R.T. Tung, "Morphology of TiSi2 Films on Si Formed From Co-Deposited Ti and Si," Thin Solid Films, 302, 127, 1997.

R. Datta, L.P. Allen, R.P. Dolan, K.S. Jones, and M. Farley, "Independent implant parameter effects on SIMOX SOI dislocation formation," Materials Science & Engineering B, 46(1-3), p. 8-13, 1997.

W. L. Warren, C.H. Seager, S.-S. Sun, A. Naman, P. H. Holloway, K. S. Jones, E. Soininen, "Microstructure and Atomic Effects on the Electroluminescent Efficiency of SrS:Ce Thin Film Devices," J. Appl. Phys., 82(10), 5138-5143, 1997.

A.D. Lilak, S.K. Earles, K.S. Jones, M.D. Giles, M.E. Law, "A Physics-Based Modeling Approach for the Simulation of Anomalous Boron Diffusion and Clustering Behaviors," IEDM Technical Digest, 493-496, 1997.

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Journal Proceedings 1996

C.-C. Lin and M.E. Law "2-D Mesh Adaption and Flux Discretization for Dopant Diffusion Modeling, IEEE Transactions on CAD, 15(2), p. 194-207, February, 1996.

M.E. Law, "Technology Computer Aided Design Characterization Needs and Requirements", J. Vacuum Science Technology B, 14(1), p. 213-217, Jan/Feb. 1996.

J.W. Lee, C.J. Santana, C.R. Abernathy, S.J. Pearton, and K.S. Jones, "Plasma-Induced Damage and Hydrogenation of A1xGa1-xP," Solid State Electronics, 39(1), 1-5, 1996.

K.S. Jones, L.H. Zhang, V. Krishnamoorthy, M.E. Law, D.S. Simons, P.A. Chi, L. Rubin, and R.G.Elliman, "Diffusion of Ion Implanted Boron in Preamorphized Silicon," Appl. Phys. Lett., 68 (19), 2672-2674, 1996.

K.S. Jones, R.G. Elliman, M. Petravic, and P. Kringhoj, "Using Doping Superlattices to Study Transient Enhanced Diffusion of Boron in Regrown Silicon," Appl. Phys. Lett., 68(22), 3111-3113, 1996.

S.B. Herner, V. Krishnamoorthy, and K.S. Jones, "Point Defect-Dislocation Loop Behavior in Si with a TiSi2 Film," Applied Surface Science, 103(4), 377-382, 1996.

C.R. Abernathy, S.J. Pearton, J.D. MacKenzie, J.R. Mileham, S.R. Bharatan, V. Krishnamoorthy, K.S. Jones, M. Hagerott-Crawford, R.J. Shul, S.P. Kilcoyne, J.M. Zavada, D. Zhang, R.M. Kolbas, "Growth and Fabrication of GaN-InGaN Microdisk Laser Structures," Solid State Electronics, 39(2), 311-313, 1996.

J.R. Kim and K.S. Jones, "Degradation of II-VI ZnSe-Based Single Quantum Well Light-Emitting Devices," Critical Rev. Solid State & Mats. Sci., 21(1), 1-76, 1996.

S.B. Herner, B.P. Gila, K.S. Jones, H-J. Gossmann, J.M. Poate, H.S. Luftman, "Surface Roughness-Induced Artifacts in SIMS Depth Profiling and a Simple Technique to Replanarize the Surface," J. Vac. Sci. Technol. B, 14, 3593, 1996.

S.J. Pearton, S. Bendi, K.S. Jones, V. Krishnamoorthy, R.G. Wilson, F. Ren, R.F. Karlicek, Jr., and R.A. Stall, "Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures," Appl. Phys. Lett., 69(1) 1879-1881, 1996.

M. Antonell, K.S. Jones and T.E. Haynes, "Carbon Incorporation for Strain Compensation during Solid Phase Epitaxial Regrowth of SiGe at 500-600°C," J. Appl. Phys., 79, 7646-51, 1996.

C.J. Santana, C.R. Abernathy, S.J. Pearton, and K.S. Jones, "Initial Growth Stages of A1xGa1-xP on Epitaxial Silicon," J. Crystal Growth, 164(1-4), 248-255, 1996.

S.B. Herner, K.S. Jones, H.-J. Gossmann, R.T. Tung, H.S. Luftman, and J.M. Poate, "The Influence of TiSi2 and CoSi2 Growth on Si Native Point Defects: The Role of the Diffusing Species," Appl. Phys. Lett., 68(20), 2870, 1996.

S.B. Herner, K.S. Jones, H.-J. Gossmann, J.M. Poate and H.S. Luftman, "Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion," Appl. Phys. Lett., 68(20), 1687, 1996.

J. Liu, V. Krishnamoorthy, H.-J. Gossmann, L. Rubin, M.E. Law and K.S. Jones, "The Effect of Boron Implant Energy on Transient Enhanced Diffusion in Silicon," J. Appl. Phys., 81(4), 1656-1660, 1996.

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Journal Proceedings 1995

M.E. Law, "Grid Adaption Near Moving Boundaries in Two-Dimensions for IC Process Simulation," IEEE Transactions on CAD, 14(10), p. 1223-30, October, 1995.

M.E. Law, "The Virtual Integrated Circuit Factory - Can it be Achieved?" IEEE Circuits and Devices, 11(2), p. 25-31, March, 1995.

K.S. Jones, J. Lui, L. Zhang, V. Krishnamoorthy and R.T. DeHoff, "Studies of the Interactions Between (311) Defects and Type I and II Dislocation Loops in Si+ Implanted Silicon," Nucl. Instru. and Meth. Phys. Res. B, 106(1-4), 227-232, 1995.

K.S. Jones, H.G. Robinson, J. Listebarger, J. Chen, J. Liu, B. Herner, H. Park, M.E. Law, D. Sieloff and J.A. Slinkman, "Studies of Point Defect/Dislocation Loop Interaction Processes in Silicon," Nucl. Instr. and Methods in Phys. Res. B, 96(1-2), 196-201, 1995.

J.K. Listebarger, H.G. Robinson, K.S. Jones, M.E. Law, D.D. Sieloff, J.A. Slinkman and T.O. Sedgwick, "Study of End of Range Loop Interactions with B+ Implant Damage Using a Boron Doped Diffusion Layer," J. Appl. Phys., 78(4), 2298-2302, 1995.

H. Park, K.S. Jones, J.A. Slinkman, and M.E. Law, "The Effect of Hydrostatic Pressure on Dopant Diffusion in Silicon," J. Appl. Phys., 78(6), 3664-3670, 1995.

J. Liu, M.E. Law and K.S. Jones, "Evolution of Dislocation Loops in Silicon in an Inert Ambient-I," Solid State Electronics, 38(7), 1305-1312, 1995.

S. Chaudhry, J. Liu, K.S. Jones and M.E. Law, "Evolution of Dislocation Loops in Silicon in an Inert Ambient-II," Solid State Electronics, 38(7), 1313-1319, 1995.

C.M. Rouleau, C.J. Santana, K.S. Jones and R.M. Park, "Dislocations in Lattice-Mismatched Wide-gap II-VI/GaAs Heterostructures as Laser Light Scatterers: Experiment and Theory," J. Appl. Phys., 78(2), 1203-1209, 1995.

J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, V. Krishnamoorthy, S. Bharatan, K.S. Jones, and R.G. Wilson, "Growth of AIN by Metalorganic Molecular Beam Epitaxy," Appl. Phys. Lett., 67(2), 253-255, 1995.

T.E. Haynes, M.J. Antonell, C. Archie Lee, and K.S. Jones, "Composition Dependence of Solid-Phase Epitaxy in Silicon-Germanium Alloys: Experiment and Theory," Phys. Rev. B, 51(12), 7762-7771, 1995.

O. Dokumaci, P. Rosseau, S. Luning, V. Krishnamoorthy, K.S. Jones, and M.E. Law, "Transmission Electron Microscopy Analysis of Heavily As-Doped, Laser and Thermally Annealed Layersin Silicon," J. Appl. Phys., 78(2), 828-831, 1995.

L.H. Zhang, K.S. Jones, P.H. Chi, and D.S. Simons, "Transient Enhanced Diffusion Without {311} Defects in Low Energy B+ Implanted Silicon," Appl. Phys. Lett., 67(14), 2025-2027, 1995.

C.R. Abernathy, J.D. MacKenzie, S.R. Bharatan, K.S. Jones, and S.J. Pearton, "Growth of InxGa1-xN on GaAs by Metalorganic Molecular Beam Epitaxy," J. Vac. Sci. Technol. A, 13 (3), 716-718, 1995.

S.B. Herner and K.S. Jones, "Point Defects in Si After Formation of a TiSi2 Film: Evidence for Vacancy Supersaturation and Interstitial Depletion," Appl. Phys. Lett., 68, 1687-1689, 1995.

C.R. Abernathy, J.D. MacKenzie, S.R. Bharatan, K.S. Jones, and S.J. Pearton, "Electrical and Structural Properties of InxGa1-xN on GaAs," Appl. Phys. Lett., 66(13), 1632-1634, 1995.

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Journal Proceedings 1994

C.L. Lee, M.D. Deal, K.S. Jones, H.G. Robinson and J.C. Bravman, "Effects of Ion Energy on the Diffusion of Si Implanted into GaAs," J. Electrochem. Soc., 141(8), 2245-2249, 1994.

H. Park, H.G. Robinson, K.S. Jones and M.E. Law, "Diffusion-Limited Interaction of Dislocation Loops and Interstitials During Dry Oxidation in Silicon," Appl. Phys. Lett., 65(4), 436-438, 1994.

M. Liang and M.E. Law, "Influence of Lattice Self-Heating and Hot-Carrier Transport on Device Performance," IEEE Transaction on Electron Devices, 41(12), p. 2391-2398, December, 1994.

S. Chaudhry and M.E. Law, "Effects of Low-Dose Silicon, Carbon, and Oxygen Implantation Damage on the Diffusion of Phosphorus in Silicon", Journal of the Electrochemical Society, 141(12), p. 3516-3521, December, 1994.

M.Liang and M.E. Law, "An Object Oriented Approach to Device Simulation," IEEE Transactions on CAD, 13(10), p. 1235-1240, October, 1994.

C. Frank and M.E. Law, "Two-Dimensional Study on the Effects of Nonamorphizing Silicon Implantation Damage on Phosphorus Diffusion", Applied Physics Letters, 64(10), p 1254-5, March 7, 1994.

M.D. Giles, D.S. Boning, G.R. Chin, W.C. Dietrich, M.S. Karasick, M.E. Law, P.K. Mozumder, L.R. Nackman, V.T. Rajan, D.M.H. Walker, R.H. Wang, and A.S. Wong, "Semiconductor Wafer Representation for TCAD," IEEE Transactions on Computer Aided Design, 13(1), p. 82-95, January, 1994.

H. Park, K.S. Jones and M.E. Law, "A Point Defect Based Two-Dimensional Model of the Evolution of Dislocation Loops in Silicon During Oxidation," J. Electrochem. Soc., 141(3), 759-764, 1994.

J.E. Yu, K.S. Jones, P.H. Holloway, B. Pathangey, E. Bretschneider, T.J. Anderson, S.S. Sun and C.N. King, "Temperature and Flow Modulation Doping of Manganese in ZnS Electroluminescent Films by Low Pressure Metalorganic Chemical Vapor Deposition," J. Electronic Materials, 23(3), 299-305, 1994.

S. Bharatan, K.S. Jones, C.R. Abernathy, S.J. Pearton, F. Ren, P. Wisk and J. Lothian, "Structural Characterization of GaN and GaAsxN1-x Grown by ECR-MOMBE," J. Vacuum Sci. and Tech. A, 12(4), 1094-1098, 1994.

H.G. Robinson, T.E. Haynes, E.L. Allen, C.C. Lee, M.D. Deal, and K.S. Jones, "Effect of Implant Temperature on Dopant Diffusion and Defect Morphology for Si Implanted GaAs," J. Appl. Phys., 76(8), 4571-4575, 1994.

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Journal Proceedings 1993

J.E. Yu and K.S. Jones, "Electron Microscopy of Post-Growth Induced Defects in ZnSe/GaAs Epilayers," Journal of Electronic Materials, 22(2), 239-245, 1993.

A. Katz, A. Feingold, S. Nakahara, S.J. Pearton, E. Lane and K.S. Jones, "Microstructural Study of Low Resistivity TiNx Formed by TRMOCVD onto InP," Semicond. Sci. Technol., 8, 450-458, 1993.

C.C. Lin, M.E. Law, and R.E. Lowther, "Automatic Grid Refinement and Higher Order Flux Discretizations for Diffusion Modeling," IEEE Transactions on Computer Aided Design, 12(8), p. 1209-16, August, 1993.

J.P. John and M.E. Law, "Oxidation Enhanced Diffusion of Phosphorus in Heavily Doped Background Concentrations," Journal of the Electrochemical Society, 140(5), p. 1489-91, May, 1993.

J.P. John and M.E. Law, "Phosphorus Diffusion in Isoconcentration Backgrounds under Inert Conditions in Silicon", Applied Physics Letters, 62(12), p. 1388-9, March 22, 1993.

H.L. Meng, S. Prussin, M.E. Law and K.S. Jones, "A Study of Point Defect Detectors Created by Si and Ge Implantation," J. Appl. Phys., 73(2), 955-960, 1993.

J.K. Listebarger, K.S. Jones and J.A. Slinkman, "Use of Type II (End of Range) Damage as Detectors for Quantifying Interstitial Fluxes in Ion-Implanted Silicon," J. Appl. Phys., 73(10), 4815-4819, 1993.

C. Lee, T.E. Haynes and K.S. Jones, "Kinetics of Solid Phase Epitaxial Regrowth in Amorphized Si0.88Ge0.12 Measured by Time-Resolved Reflectivity," Appl. Phys. Lett., 62(5), 501-503, 1993.

J. Fang, P.H. Holloway, J.E. Yu, K.S. Jones, B. Pathangey, E. Bretschneider and T. J. Anderson, "MOCVD Growth of Non-Expitaxial and Epitaxial ZnS Thin Films," Applied Surface Science, 70/71(2), 701-706, 1993.

D. Venables and K.S. Jones, "Defect formation in high dose oxygen Implanted Silicon," Nucl. Instru. Methods Phys. Res. B, 74(1-2), 65-69, 1993.

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Journal Proceedings 1992

W.S. Hobson, M.C. Wu, Y.K. Chen, M.A. Chin, M. Geva and K.S. Jones, "Periodic Index Separate Confinement Heterostructure InGaAs/AlGaAs Multiple Quantum Well Laser Grown by Organometallic Vapor Phase Epitaxy," Appl. Phys. Lett., 60(5), 598-600, 1992.

S.J. Pearton, U.K. Chakrabarti, E. Lane, A.P. Perley, C.R. Abernathy, W.S. Hobson and K.S. Jones, "Characteristics of III-V Dry Etching in HBr-Based Discharges," Journal of the Electrochemical Society, 139, 856-864, 1992.

A. Katz, A. Feingold, S. Nakahara, E. Lane, M. Geva, S.J. Pearton, F. Stevie and K.S. Jones, "Influence of Ammonia on RTCVD of TiN Filing from Tetrakis Ti Precursor onto InP," J. App. Phys., 71(2), 993-1000, 1992.

D. Venables, K.S. Jones, and F. Namavar, "Low-Dislocation-Density Silicon-on-Insulator Material Produced by Sequential Oxygen Implantation and Low-Temperature Annealing," Appl. Phys. Lett., 60(25), 3147-3149, 1992.

H. Park and M.E. Law, "Point Defect Based Modeling of Low Dose Silicon Implant Damage and Oxidation Effects on Phosphorus and Boron Diffusion in Silicon," Journal of Applied Physics, 72(8), October 15, 1992, p. 3431-40.

M. Liang and M.E. Law, "The Effect of Selectively Ion-Implanted Collectors on Bipolar Electrical Characteristics," Solid State Electronics, 35(7), p. 1017-8, July, 1992.

D.R. Apte and M.E. Law, "Comparison of Iterative Methods for AC Analysis in PISCES-IIB," IEEE Transactions on Computer Aided Design, 11(5), p. 671-3, May, 1992.

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Journal Proceedings 1991

K. Shazad, K.S. Jones, P.D. Lowen and R.M. Park, "Exchange Electron-hole Interaction at the Isoelectronic Oxygen Trap in Zinc Selenide," Physical Review B, 43(11), 9247-9250, 1991.

O. Aina, M. Mattingly, J.R. Bates, A. Coggins, J. O'Connor, S.K. Shastry, J.P. Salerno, A. Davis, J.P. Lorenzo and K.S. Jones, "High-Purity InP Grown on Si by Organometallic Vapor Phase Epitaxy," Appl. Phys. Lett., 58(14), 1554-1556, 1991.

A. Deneuville, C.H. Park, P. Ayyub, T. Anderson, P. Lowen, K.S. Jones and P.H. Holloway, "O+ Implantation in ZnSe: Lattice Distortion by Raman Measurement," Applied Surface Science, 50, 308-311, 1991.

K.S. Jones and C.J. Santana, "Amorphization of Elemental and Compound Semiconductors Upon Ion Implantation," Journal of Materials Research, 6(5), 1048-1054, 1991.

K.S. Jones and D. Venables, "The Effect of Implant Energy, Dose and Dynamic Annealing of End of Range Damage in Ge+ Implanted Silicon," J. Appl. Phys., 69(5), 2931-2937, 1991.

D. Venables and K.S. Jones, "Can Recoil Distribution Models Account for End of Range Damage?" Nuclear Instruments and Methods in Physics Research B, 59/60(2), 1019-1022, 1991.

A. Katz, K.S. Jones, A. Feingold, S.J. Pearton and M. Geva, "High Quality RTA of InP and GaAs Substrates Under Low Pressure Tertialbutyl Phosphine and Tertialbutyl Arsine Ambient," Journal of Vacuum Science and Technology B, 9, 2466-2472, 1991.

J.E. Yu, K.S. Jones and R.M. Park, "A Technique for the Preparation of Cross-Sectional TEM Samples of ZnSe/GaAs Heterostructures Which Eliminates Process-Induced Defects," Journal of Electron Microscopy Technique, 18, 315-324, 1991.

E.L. Allen, J.J. Murray, M.D. Deal, J.D. Plummer, K.S. Jones and W.S. Rubart, "Comparison of the Diffusion Behavior of Ion-implanted Sn, Ge, and Si in GaAs," J. Electrochem. Soc., 138, 3440-3449, 1991.

A. Katz, A. Feingold, S. Nakahara, S.J. Pearton, M. Geva, E. Lane and K.S. Jones, "Rapid Thermal Processing of WSix Contacts to InP in Low-Pressure N2:H2 and Tertiarybutylphosphine Ambients," J. Appl. Phys., 69(11), 7664-7673, 1991.

W.S. Hobson, F. Ren, M.L. Schnoes, S.K. Sputz, T.D. Harris, S.J. Pearton, C.R. Abernathy and K.S. Jones, "GaAs/AlGaAs Quantum Well and Modulation-Doped Heterostructures Grown by Organometallic Vapor Phase Epitaxy Using Trimethylamine Alane," Appl. Phys. Lett., 59(16), 1975-1977, 1991.

A. Katz, A. Feingold, U.K. Chakrabarti, S.J. Pearton and K.S. Jones, "Highly Stable Silicon Dioxide Films Deposited by Means of Rapid Thermal Low-pressure Chemical Vapor Deposition onto InP," Appl. Phys. Lett., 59(20), 2552-2554, November 1991.

E.L. Allen, J.J. Murray, M.D. Deal, J.D. Plummer, K.S. Jones, and W.S. Rupert, "A Comparison of the Diffusion Behavior of Ion-Implanted Sn, Ge, and Si in Gallium Arsenide," J. Electrochem. Soc., 138(11), 3440-3449, 1991.

K.S. Jones, E.L. Allen, H.G. Robinson, D.A. Stevenson, M.D. Deal and J.D. Plummer, "Extended Defects in Ion Implanted GaAs," J. Appl. Phys., 70(11), 6790-6795, 1991.

M.E. Law, E. Solley, M. Liang and D. Burk, "Self-Consistent Modeling of Minority Carrier Lifetime and Mobility," IEEE Electron Device Letters, 12(8), p. 401-403, Aug., 1991.

H. Park and M.E. Law, "The Effects of Low-Dose Silicon Implantation Damage on Diffusion of Phosphorus and Arsenic in Silicon," Applied Physics Letters, 58(7), p. 732-734, 1991.

M.E. Law and J.R. Pfiester, "Low-Temperature Annealing of Arsenic/Phosphorus Junctions," IEEE Transactions on Electron Devices, 38(2), p. 278-284, Feb. 1991.

J.R. Pfiester, M.E. Law and R.W. Dutton, "Improved MOSFET Short Channel Device Using Germanium Implantation," IEEE Electron Device Letters, 9(7), p. 343-346, July 1988.

M.E. Law and R.W. Dutton, "Verification of Analytic Point Defect Models using SUPREM-IV," IEEE Transactions on Computer Aided Design, 7(2), p. 181-190, Feb. 1988.

M.E. Law, "Parameters for Point Defect Diffusion and Recombination," IEEE Transactions on Computer Aided Design, 10(9), p. 1124-1131, Sept. 1991.

M.E. Law, H. Park and P. Novell, "Theory of Dopant Diffusion Assuming Nondilute Concentrations of Dopant-Defect Pairs," Applied Physics Letters, 59(26), p. 3488-9, Dec. 23, 1991.

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Journal Proceedings 1990

S.J. Pearton, W.S. Hobson, A.E. Von Neida, N.M. Haegel, K.S. Jones, N. Morris and B.J. Sealy, "Implant Activation and Redistribution in AlxGa1-xAs," J. Appl. Phys., 67(5), 2396-2409, 1990.

S.J. Pearton, W.S. Hobson, F.A. Baiocchi, B. Emerson and K.S. Jones, "Reactive Ion Etching of InP, InGaAs, InAlAs: Comparison of C2H6/H2 with C Cl2F2/O2," Journal of Vacuum Science and Technology B, 8(1), 57-67, 1990.

S. Prussin and K.S. Jones, "Role of Ion Mass, Implant Dose, and Wafer Temperature on End-of-Range Defects," Journal of the Electrochemical Society, 137, 1912-1913, 1990.

S.J. Pearton, W.S. Hobson, F.A. Baiocchi and K.S. Jones, "Reactive Ion Etching of InAs, InSb, and GaSb in C Cl2F2/O2 and C2H6/H2," Journal of the Electrochemical Society, 137(6), 1924-1934, 1990.

S.J. Pearton, B. Jalali, J.M. Poate, J.D. Fox, K.W. Kemper, C.W. Magee and K.S. Jones, "High-Energy (56 MeV) Oxygen Implantation in Si, GaAs, and InP," Appl. Phys. Lett., 57(21), 2253-2255, 1990.

S.J. Pearton, U.K. Chakrabarti, A.P. Perley and K.S. Jones, "Ion Milling Damage in InP and GaAs," J. Appl. Phys., 68(6), 2760-2768, 1990.

S.J. Pearton, W.S. Hobson, F. Baiocchi and K.S. Jones, "RIE of InAs, InSb, and GaAs in CCl2F2/O2 and C2H6/H2," Journal of Electrochemical Society, 137 (6), 1924-1934, 1990.

S.J. Pearton, B. Jalali, J.M. Poate, J.D. Fox, K.W. Kemper, C.W. Magee and K.S. Jones, "High Energy (56 MeV) Implantation in Si, GaAs and InP," Appl. Phys. Lett., 57(21), 2253-2255, 1990.

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Journal Proceedings 1989

S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, A.B. Emerson, E. Lane and K.S. Jones, "Aluminum Composition Dependence of Reactive Ion Etching on AlGaAs with CC12F2:O2," J. Appl. Phys., 66(5), 2137-2147, 1989.

S.J. Pearton, M.J. Vasiles, K.S. Jones, K.T. Short, E.O. Lane, T.R. Fullowan, A.E. Von Neida and N.M. Haegel, "Reactive Ion Etching of GaAs with CCl2F2:O2 - Etch Rates, Surface Chemistry and Residual Damage," J. Appl. Phys., 65(3), 1281-1292, 1989.

S.J. Pearton, K.T. Short, K.S. Jones, A.G. Baca and C.S. Wu, "Ion Beam Induced Intermixing of WSi0.45 and GaAs," Materials Science and Engineering B, 3(3), 273-277, 1989.

S..J. Pearton, W.S. Hobson and K.S. Jones, "Etch Rates and Surface Chemistry of GaAs and AlGaAs Reactively Ion Etched in C2H6/H2," J. Appl. Phys., 66(10), 5009-5017, 1989.

S.J. Pearton, A.B. Emerson, U.K. Chakrabarti, E. Lane, K.S. Jones, K.T. Short, A.E. White and T.R. Fullowan, "Temperature Dependence of RIE of GaAs with CCl2F2:O2," J. Appl. Phys., 66(8), 3839-3849, 1989.

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Journal Proceedings 1988

J.R. Pfiester, M.E. Law & R.W. Dutton, "Improved MOSFET short-channel device using germanium implantation," Electron Device Letters, IEEE, 9(7), 343-346, 1988.

M.E. Law and R.W. Dutton, "Verification of analytic point defect models using SUPREM-IV [dopant diffision]," Computer-Aided Design of Integrated Circuits & Systems, IEEE Transactions on, 7(2), 181-190, 1988.

K.S. Jones, D.K. Sadana, S. Prussin, J. Washburn and E.R. Weber, "The Formation of a Continuous Amorphous Layer upon Room Temperature Implantation of Silicon with Boron," J. Appl. Phys., 63(5), 1414-1418, 1988.

K.S. Jones, S. Prussin and E.R. Weber, "A Systematic Analysis of Defects in Ion Implanted Silicon," Applied Physics A, 45, 1-34, 1988 - INVITED PAPER.

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Journal Proceedings 1987

K.S. Jones, S. Prussin and E.R. Weber, "The Effect of Implant Species on Defect Anneal Kinetics, Part I: Arsenic and Germanium Implantation," Nuclear Instruments and Methods in Physics Research B, 21, 496-503, 1987.

S. Prussin and K.S. Jones, "The Effect of Implant Species on Defect Anneal Kinetics, Part II: Silicon and Phosphorous Implantation," Nuclear Instruments and Methods in Physics Research B, 21, 499-506, 1987.

K.S. Jones and E.E. Haller, "Ion Implantation of Boron in Germanium," J. Appl. Phys., 61(7), 2469-2477, 1987.

K.S. Jones, S. Prussin and E.R. Weber, "Enhanced Elimination of Implantation Damage Upon Exceeding the Solid Solubility," J. Appl. Phys., 62(10), 4114-4117, 1987.

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Journal Proceedings 1986

K.S. Jones, S. Prussin and E.R. Weber, "The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon," Materials Science Forum, 10-12, 751-756, 1986.

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Journal Proceedings 1984

K.S. Jones and S.J. Pearton, "Grain Boundaries in Germanium: Effects of Exposure to Plasmas," Phys. Stat. So. (a), 82, K101-K105, 1984.

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Conference Proceedings 2007

Conference Proceedings 2006

Michelle Phen, Kevin Jones and Valentin Craciun, "Strain Relaxation and Solid Phase Eptiaxial Regrowth in Ion-Implanted Strained Silicon on Relaxed SiGe," Materials Research Society Spring 2006 Conference, Symposium D, D3.9, San Francisco CA, April 2006.

J. S. Moore, K. S. Jones and K. Thompson, "Developing Local Electrode Atom Probe as a Method of Characterizing Semiconductors," Materials Research Society Spring 2006 Conference, Symposium C, C5.9, San Francisco CA, April 2006.

Daniel Zeenberg and Kevin Jones , "Varying the Regrowth Conditions of Amorphous Silicon with Laser Spike Annealing," Materials Research Society Spring 2006 Conference, Symposium C, C4.2, San Francisco CA, April 2006.

N. G. Rudawski, K. N. Siebein, K. S. Jones and J. Liu, "Effect of Uniaxial Stress on Solid Phase Epitaxial Regrowth and Mask Edge Defect Formation in Two-Dimensional Amorphized Si," Materials Research Society Spring 2006 Conference, Symposium C, C2.9, San Francisco CA, April 2006.

Leah Adine Edelman, Jeannette M. Jacques, Judy L. Hoyt, Rob G. Gilliman and Kevin S. Jones, "Diffusion of Ion Implanted Dopants in Amorphous SiGe during Solid Phase Epitaxial Recrystallization," Materials Research Society Spring 2006 Conference, Symposium C, C2.2, San Francisco CA, April 2006.

Jeannette M. Jacques, Kevin S. Jones, Mark E. Law, Lance S. Robertson, Leonard M. Rubin and Enrico Napolitani, "Room Temperature Boron Diffusion in Amorphous Silicon," Materials Research Society Spring 2006 Conference, Symposium C, C2.1, San Francisco CA, April 2006.

Robert Robison and Mark Law, "Simulation of Fluorine Diffusion and Boron-Fluorine Cointeraction," Materials Research Society Spring 2006 Conference, Symposium C, C1.8, San Francisco CA, April 2006.

Kevin S. Jones, "Ultra Shallow Dopant Activation Technologies," 2006 Annual Joint Symposium - Florida Chapter of the AVS Science and Technology Society (FLAVS) and Florida Society for Microscopy (FSM), March 12-16, 2006, Orlando FL.

Michelle Phen, V. Craciun and Kevin S. Jones, "Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion-Implanted Strained Silicon on Relaxed SiGe," 2006 Annual Joint Symposium - Florida Chapter of the AVS Science and Technology Society (FLAVS) and Florida Society for Microscopy (FSM), March 12-16, 2006, Orlando FL.

Danijel Gostovic, Kevin S. Jones, and Eric D. Wachsman, "Three-Dimensional Reconstruction of Porous Solid Oxide Fuel Cell Cathodes," 2006 Annual Joint Symposium - Florida Chapter of the AVS Science and Technology Society (FLAVS) and Florida Society for Microscopy (FSM), March 12-16, 2006, Orlando FL.

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Conference Proceedings 2005

J.S. Moore, E. Kuryliw, K.S. Jones, & R. Ulfig, "Developing Local Electrode Atom Probe as a Method of Profiling Dopants in Silicon," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 23, June 5-8, 2005, Daytona Beach FL.

R.A. Camillo-Castillo, M.E. Law, K.S. Jones, R. Lindsay, K. Maex, B.J. Pawlak, & S. McCoy, "Effect of Varying the Initial Conditions Prior to Flash-Assist Rapid Thermal Processing on Dopont Activation, Diffusion, and Defect Populations," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 155-159, June 5-8, 2005, Daytona Beach FL.

C.R. Olson, E. Kuryliw, & K.S. Jones, "The Effect of Stress on the Evolution of Mask-Edge Defects in Ion Implanted Silicon," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 171-175, June 5-8, 2005, Daytona Beach FL.

M.S. Phen, R.T. Crobsy, V. Craciun, & K.S. Jones, "Solid Phase Recrystallization and Strain Relaxation in Strained Si on SiGe," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 176-178, June 5-8, 2005, Daytona Beach FL.

Ljubo Radic, Antonio F. Saavedra, Kevin S. Jones, & Mark E. Law, "Modeling of B Diffusion in the Presence of Ge," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 189-190, June 5-8, 2005, Daytona Beach FL.

Daniel Zeenberg & K.S. Jones, "The Effect of Non-Melt Laser Annealing on Pre-Amorphized Silicon," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 200, June 5-8, 2005, Daytona Beach FL.

R.T. Crosby, K.S. Jones, M.E. Law, & L. Radic, "Correlation between B diffusion and Clustering in Si0.77Ge0.23," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 219-229, June 5-8, 2005, Daytona Beach FL.

J.M. Jacques, S.D. Maslov, E. Kuryliw, M.S. Phen, & K.S. Jones, "Structural Relaxation effects upon Boron Diffusion During SPER," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 251-257, June 5-8, 2005, Daytona Beach FL.

R.R. Robison & M.E. Law, "Simulation of Boron-fluorine Co-diffusion Behavior," USJ- 2005 Eighth International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, p. 301-306, June 5-8, 2005, Daytona Beach FL.

M.S. Phen, R. T. Crosby, V. Craciun, K. S. Jones, M.E. Law, J.L. Hansen, and A.N. Larsen, "Solid Phase Recrystallization and Strain Relaxation in Ion-Implanted Strained Si on SiGe Heterostructures," Materials Research Society Symposium Proceedings 864, E4.28.1-7, 2005.

Jeannette M. Jacques, Ting Y. Tsui, Andrew J. McKerrow, and Robert Kraft, "Fracture Property Improvements of a Nanoporous Thin Film Via Post Deposition Bond Modifications," Materials Research Society Symposium Proceedings 863, B3.8.1-6, 2005.

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Conference Proceedings 2004

K.S. Jones & F. Amaud, "Process technology advances in source drain engineering," Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International, Page(s) 1043, December 2004.

S. Earles, M.E. Law, K.S. Jones, J. Frazer, S. Talwar, D. Downey, & E. Arevalo, "Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing," Advanced Thermal Processing of Semiconductors, 12th International Conference on, RTP 2004, Page(s) 143-147, Portland OR, September 2004.

M.E. Law, K.S. Jones, L. Radic, R.T. Crosby, M. Clark, K. Gable, and C. Ross, "Process Modeling for Advanced Devices," Materials Research Society Spring 2004, Vol. 810, Symposium C, C3.1, San Francisco, CA, April 2004.

R. Crosby, A.F. Saavedra, and K.S. Jones, "Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe," Materials Research Society Spring 2004, Vol. 810, Symposium C, C4.12, San Francisco, CA, April 2004.

N. Burbure and K.S. Jones, "The Effect of Oxide Trenches on Defect Formation and Evolution in Ion-Implanted Silicon," Materials Research Society Spring 2004, Vol. 810, Symposium C, C4.19, San Francisco, CA, April 2004.

R.T. Crosby, K.S. Jones, M.E. Law, P.E. Thompson, J. Liu, A. Saavedra, and M. Klimov, "BIC Formation and Boron Diffusion in Si0.8Ge0.2," Materials Research Society Spring 2004, Vol. 810, Symposium C, C7.4, San Francisco, CA, April 2004.

A.F. Saavedra, K.S. Jones, M.E. Law, and K.K. Chan, "Concentration Dependence of Boron Interstitial Cluter Dormation in Silicon-on-Insulator (SOI)," Materials Research Society Spring 2004, Vol. 810, Symposium C, C8.11, San Francisco, CA, April 2004.

R.R. Robison, A.F. Saavedra, and M.E. Law, "Diffusion of Fluorine at High Concentration in Silicon: Experiments and Models," Materials Research Society Spring 2004, Vol. 810, Symposium C, C8.13, San Francisco, CA, April 2004.

L. Radic, A.D. Lilak, and M.E. Law, "Modeling B Clustering in Si and SiGe," Materials Research Society Spring 2004, Vol. 810, Symposium C, C8.14, San Francisco, CA, April 2004.

J.M. Jacques, N. Burbure, K.S. Jones, M.E. Law, L.S. Robertson, D.E. Downey, L.M. Rubin, J. Bennett, M. Beebe, and M. Klimov, "Enhanced Boron Diffusion in Amorphous Silicon," Materials Research Society Spring 2004, Vol. 810, Symposium C, C10.3, San Francisco, CA, April 2004.

C. Ross and K.S. Jones, "The Role of Stress on the Shape of the Amorphous-Crystalline Interface and Mask-Edge Defect Formation in Ion-Implanted Silicon," Materials Research Society Spring 2004, Vol. 810, Symposium C, C10.4, San Francisco, CA, April 2004.

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Conference Proceedings 2003

R.A. Camillo-Castillo, M.E. Law, K.S. Jones and L.M. Rubin, "Influence of Low Temperature Preanneals on the Behavior of Dopants and Defects for Low Energy Ge Preamorphized Silicon," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 75-80, April 2003.

K.A. Gable, L.S. Robertson, K.S. Jones, and M.E. Law, "The Effect of Pre-amorphization Implant Energy on Boron Ultra-shallow Junction Formation Following Laser Thermal Processing," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 81-88, April 2003.

K.A. Gable, L.S. Robertson, K.S. Jones, and M.E. Law, "Strain Compensation for Boron Ultra-shallow Junction Formation Following Laser Thermal Processing of Ion Implanted Silicon," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 373-380, April 2003.

J.M. Jacques, K.S. Jones, D. Chan, S. Sinha, S. McCoy, Joe Bennett, and Meredith Beebe, "Role of Fluorine in Rapid Thermal Processing Methodologies," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 413-418, April 2003.

C.E. Ross and K.S. Jones, "The Effect of a Patterned Nitride Layer on the Evolution of Implant-Related Damage in Silicon," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 429-432, April 2003.

A.F. Saavedra, A.C. King, K.S. Jones and E.C. Jones, "Extended Defect Evolution in Boron Implanted Silicon-on-Insulator (SOI)," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 433-439, April 2003.

R. Crosby, K.S. Jones, M.E. Law, A.N. Larsen and J.L. Hansen, "{311} Defect Evolution in Ion-Implanted, Relaxed Si1-xGex," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 440-445, April 2003.

A.C. King, A.F. Saavedra, K.S. Jones and D.F. Downey, "Surface Proximity Effect on End-of-range Damage of Low Energy Ge= Implantation," Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 2003, Santa Cruz, CA, p. 447-450, April 2003

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Conference Proceedings 2002

R.R. Robison & M.E. Law, "Fluorine diffusion: models and experiments," Electron Devices Meeting, 2002. IEDM '02. Digest. International, p. 883-886, December 2002.

K.S. Jones, S.P. Crane, C.E. Ross, T. Malmborg, D. Downey & E. Arevalo, "The role of pre-anneal conditions on the microstructure of Ge/sup +/implanted Si after high temperature milli-second flash annealing," Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on, p. 22-27, September 2002.

Renata A. Camillo-Castillo, Kevin S. Jones, Mark E. Law, and Leonard M. Rubin, "Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon," Mat. Res. Soc. Symp. Proc., 717, C1.4, p. 21-26, 2002.

Robert Crosby, Jackie Frazier, K.S. Jones, M.E. Law, A. Nylandsted Larsen, and J. Lundsgaard Hansen, "The Effect of Ge Content in MBE Si(1-x) Ge(x) on the Evolution of {311} Defects," Mat. Res. Soc. Symp. Proc., 717, C1.6, p. 27-31, 2002.

Erik Kuryliw, Kevin S. Jones, David Sing, Michael J. Rendon, and Somit Talwar, "Effect of Laser Thermal Processing on Defect Evolution in Silicon," Mat. Res. Soc. Symp. Proc., 717, C1.9, p. 39-44, 2002.

K.A. Gable, K.S. Jones, M.E. Law, L.S. Robertson, and S. Talwar, "Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing," Mat. Res. Soc. Symp. Proc. Vol. 717, C1.10, p. 45-50, 2002.

Mark H. Clark, Kevin S. Jones, Michael Rendon, and Kevin A. Gable, "Laser Thermal Processing of Alternate Dopants in Silicon," Mat. Res. Soc. Symp. Proc., 717, C1.11, p.51-56, 2002.

A. Saavedra, J. Frazier, D. Wrigley, K. Jones, I. Avci, S. Earles, M. Law, and E. Jones, "Silicon Self-Interstitial Cluster Formation and Dissolution in SOI," Mat. Res. Soc. Symp. Proc., 717, C2.5, p. 95-100, 2002.

J.M. Jacques, L.S. Robertson, K.S. Jones, Joe Bennett, and Mike Rendon, "Effect of Flourine on the Diffusion of Boron in Amorphous Silicon," Mat. Res. Soc. Symp. Proc., 717, C4.6, p. 175-180, 2002.

Ibrahim Avci and Mark E. Law, "Modeling Dislocation Loop Nucleation and Evolution in Germanium, Arsenic, and Boron Implanted Silicon," Mat. Res. Soc. Symp. Proc., 717, C5.9.1-6, 2002.

Z. Insepov, L.P. Allen, C. Santeufemio, K.S. Jones, and I. Yamada, "Computer Modeling and Electron Microscopy of Silicon Surfaces Irradiated by Cluster Ion Impacts," 6th International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES 2002), Dresden, Germany, June 2002.

Craig Jasper, Leonard Rubin, Chad Lindfors, Kevin S. Jones, and Jungwoo Oh, "Electrical Activation of Implanted Single Crystal Germanium Substrates," 14th International Conference on Ion Implantation Technology, September 2002.

Kevin S. Jones, Daniel F. Downey, Jeff Gelpey and Tony Fiory, "The Effect of Vortek Flash Lamp Annealing on the Evolution of Implantation Induced Dislocation Loops," 14th International Conference on Ion Implantation Technology, September 2002.

Susan Felch, John Borland, Ziwei Fang, Bon-Woong Koo, Hans Gossmann, Kevin Jones and Chad Lindfors, "Optimized BF3 P2LAD Implantation With Si-PAI For Shallow, Abrupt and High Quality p+/n Junctions Formed Using Low Temperature SPE Annealing," 14th International Conference on Ion Implantation Technology, September 2002.

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Conference Proceedings 2001

I. Avci, M.E. Law, E. Kuryliw & K.S. Jones, "Modeling the nucleation and evolution of end of range dislocation loops in silicon," Electron Devices Meeting, 2001. IEDM Technical Digest. International, p. 38.2.1-4, December 2001.

L.S. Adam, M.E. Law, S. Hedge, & O. Dokumaci, "Comprehensive model for nitrogen diffusion in silicon," Electron Devices Meeting, 2001. IEDM Technical Digest. International, p. 38.5.1-4, December 2001.

J.E. Sanchez, G. Bosman, & M.E. Law, "Device Simulation of generation-recombination noise under periodic large-signal conditions," Electron Devices Meeting, 2001. IEDM Technical Digest. International, p. 21.1.1-4, December 2001.

Mark H. Clark, Kevin S. Jones, Tony E. Haynes, Charles J. Barbour, Kenneth G. Minor and Ebrahim Andideh, "The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon," Mat. Res. Soc. Symp. Proc., 669, J3.6.1-6, 2001.

Lahir Shaik Adam, Lance Robertson, Mark E. Law, Kevin Jones, Kevin Gable, Suri Hegde and Omer Dokumaci, "Diffusion of Implanted Nitrogen in Silicon at High Doses," Mat. Res. Soc. Symp. Proc., 669, J3.10.1-6, 2001.

Susan Earles, Mark Law, Kevin Jones, Somit Talwar and Sean Corcoran, "Nonmelt Laser Annealing of 1 KeV Boron Implanted Silicon," Mat. Res. Soc. Symp. Proc., 669, J4.1.1-5, 2001.

Ibrahim Avci, Mark E. Law, Craig Jasper, Hernan A. Rueda, & Rainer Thoma, "Modeling Threading Dislocation Loop Nucleation and Evolution in MeV Boron Implanted Silicon," Mat. Res. Soc. Symp. Proc., 669, J4.4.1-6, 2001.

R. Brindos, K.S. Jones and M.E. Law, "Effect of Arsenic on Extended Defect Evolution in Silicon," Mat. Res. Soc. Symp. Proc., 669, J5.2.1-6, 2001.

R. Brindos, M.H. Clark, K.S. Jones, M. Griglione, Hans-J. Gossmann, A. Agarwal, B. Murto and E. Andideh, "Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon," Mat. Res. Soc. Symp. Proc., 669, J5.7.1-6, 2001.

Andres F. Gutierrez, Kevin S. Jones and Daniel F. Downey, "Defect Evolution from Low Energy, Amorphizing, Germanium Implants on Silicon," Mat. Res. Soc. Symp. Proc., 669, J5.11.1-5, 2001.

Omer Dokumaci, Richard Kaplan, Mukesh Khare, Paul Ronsheim, Jay Burnham, Anthony Domenicucci, Jinghong Li, Robert Fleming, Lahir S. Adam & Mark E. Law, "Diffusion and Defect Structure in Nitrogen Implanted Silicon," Mat. Res. Soc. Symp. Proc., 669, J6.4.1-6, 2001.

C.D. Lindfors, K.S. Jones and M.J. Rendon, "Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial Regrowth," Mat. Res. Soc. Symp. Proc., 669, J8.5.1-6, 2001.

C. Camarce, L. Radic, P. Keys, R. Brindos, K.S. Jones and M.E. Law, "Modeling of Dopant Defect Interactions," Mat. Res. Soc. Symp. Proc., 669, J9.1.1-9, 2001.

Ibrahim Avci, Mark E. Law, Erik Kuryliw and Kevin S. Jones, "Modeling the Nucleation and Evolution of End of Range Dislocation Loops in Silicon," IEDM Technical Digest, 835-838, 2001.

L.S. Robertson, J. Jacques, K.S. Jones, M.E. Law, D.F. Downey, M.J. Rendon and D. Sing, "Co-implantation of Boron and Fluorine in Silicon," International Workshop on Junction Technology, Tokyo, Japan, November 2001.

Kevin S. Jones, Mark E. Law, Richard Brindos, and Patrick Keys, "TEM Studies of Ion Implantation Damage in ULSI Technology," Microsc. Semicond. Mater. Conf., Oxford, March 2001.

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Conference Proceedings 2000

L.S. Adam, M.E. Law, O. Dokumaci & S. Hedge, "A physical model for implanted nitrogen diffusion and its effect on oxide growth," Electron Device Meeting, IEDM Technical Digest. International. San Francisco, CA, p. 507-510, December 2000

Mark E. Law, Kevin S. Jones, "A New Model for {311} Defects Based on In-Situ Measurement Electron Device Meeting, IEDM Technical Digest. International. San Francisco, CA, p. 511-514, December 2000

C. Pladdy, I. Avci, & M.E. Law, "Optimum node positioning in adaptive grid refinement and the Delaunay-Voronoi algorithm [semiconductor process simulation]," Simulation of Semiconductor Processes and Devices, 2000. SISPAD 200. 2000 International Conference on, p. 222-224, September 2000

I. Avci, H.A. Rueda & M.E. Law, "Model for the evolution of dislocation loops in silicon," Simulation of Semiconductor Processes and Devices, 2000. SISPAD 200. 2000 International Conference on, p. 210-213, September 2000

L.S. Robertson, P.N. Warnes, K.S. Jones, S.K. Earles, M.E. Law, D.F. Downey, S. Falk, and J. Liu, "Junction Depth Reduction of Ion Implanted Boron in Silicon Through Fluorine Ion Implantation," Mat. Res. Soc. Symp. Proc., 610, B4.2.1-6, 2000.

Aaron D. Lilak, Viswanath Krishnamoorthy, David Vieira, Mark Law, Kevin Jones, "A Study of Boron Clustering Transients and Mechanisms in Doped Silicon," Mat. Res. Soc. Symp. Proc., 610, B.5.4.1-3, 610, 2000.

L.S. Robertson, R. Brindos, K.S. Jones, M.E. Law, D.F. Downey, S. Falk, J. Liu, "The Effect of Impurities on Diffusion and Activation of Ion Implanted Boron in Silicon," Mat. Res. Soc. Symp. Proc., 610, B5.8.1-6, 2000.

Omer Dokumaci, Paul Ronsheim, Suri Hegde, Dureseti Chidambarrao, Lahir Shaik-Adam, and Mark E. Law, "Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion," Mat. Res. Soc. Symp. Proc., 610, B5.9.1-6, 2000.

P.H. Keys, R. Brindos, V. Krishnamoorthy, M. Puga-Lambers, K.S. Jones, M.E. Law, "Phosphorus/Silicon Interstitial Annealing After Ion Implantation," Mat. Res. Soc. Symp. Proc., 610, B6.6.1-6, 2000.

Hugo Saleh, Mark E. Law, Sushil Bharatan, Kevin S. Jones, Wish Krishnamoorthy, Temel Buyuklimani, "Energy Dependence of Transient Enhanced Diffusion and {311} Defect Kinetics," Mat. Res. Soc. Symp. Proc., 610, B6.7.1-5, 2000.

Mark E. Law, Michelle D. Griglione, and Misty Northridge, "Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon," Mat. Res. Soc. Symp. Proc., 610, B.7.4.1-6, 2000.

R. Brindos, P.H. Keys, M. Griglione, K.S. Jones, M.E. Law, Aditya Agarwal, Ebrahim Andideh, "Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium," Mat. Res. Soc. Symp. Proc., 610, B.8.4.1-6, 2000.

C.D. Lindfors, K.S. Jones, M.E. Law, D.F. Downey and R.W. Murto, "Boron Activation During Solid Phase Epitaxial Regrowth," Mat. Res. Soc. Symp. Proc., 610, B10.2.1-6, 2000.

Heather Banisaukas, Kevin S. Jones, Somit Talwar, Scott Falk and Dan F. Downey, "Defect Reduction in Laser Thermal Processing," Mat. Res. Soc. Symp Proc.., 610, B10.3.1-6, 2000.

Susan Earles, Mark Law, Kevin Jones, Rich Brindos and Somit Talwar, "Effects of Nonmelt Laser Annealing on 5keV Boron Implant in Silicon," Mat. Res. Soc. Symp. Proc., 610, B10.5.1-5, 2000.

G. Subramanian, K.S. Jones, M.E. Law, M.J. Caturla, S. Theiss and T. Diaz de la Rubia, "Relative Stability of Silicon Self-Interstitial Defects," Mat. Res. Soc. Symp. Proc., 610, B11.10.1-6, 2000.

Kevin S. Jones, Erik Kuryliw, Robert Murto, Michael Rendon and Somit Talwar, "Boron Diffusion upon Annealing of laser Thermal Processed Silicon," 2000 International Conference Ion Implantation Technology Proceedings, 111-114, 2000.

L.S. Robertson, P.N. Warnes, M.E. Law, K.S. Jones, D. F. Downey and J. Liu, "The Role of Fluorine on Reducing TED in Boron Implanted Silicon," 2000 International Conference Ion Implantation Technology Proceedings, 171-174, 2000.

Robert Murto, Kevin Jones, Michael Rendon and Somit Talwar, "Activation and Deactivation Studies of Laser Thermal Annealed Boron, Arsenic, Phosphorus, and Antimony Ultra-Shallow Abrupt Junctions," 2000 International Conference Ion Implantation Technology Proceedings, 155-158, 2000.

Robert Murto, Kevin Jones, Michael Rendon and Somit Talwar, "An Investigation of Species Dependence in Germanium Pre-amorphized and Laser Thermal Annealed Ultra-Shallow Abrupt Junctions," 2000 International Conference Ion Implantation Technology Proceedings, 182-185, 2000.

Peter Borden, Clarence Furguson, David Sing, Larry Larson, Laurie Bechtler, Kevin Jones and Peter Gable, "In-line Characterization of Preamorphous Implants (PAI)," 2000 International Conference Ion Implantation Technology Proceedings, 635-638, 2000.

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Conference Proceedings 1999

Jinning Liu, Kevin S. Jones, Daniel F. Downey and Sandeep Mehta, "Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants," Mat. Res. Soc. Symp. Proc., 568, 9-14, 1999.

Richard Brindos, Mark E. Law, Kevin S. Jones, and Ebrahim Andideh, "Arsenic Trapping and its Effect on Enhanced Diffusion," Mat. Res. Soc. Symp. Proc., 568, 169-174, 1999.

Lahir Shaik Adam, Mark E. Law, Omer Dokumaci, Yaser. Haddara, Cheruvu Murthy, Heemyong Park, Suri Hegde, Dureseti Chidambarro, Steve Mollis, Tony Domenicucci, Chester Dziobkowski, Kevin Jones, Phillip Wong, Ralph Young and R. Srinivasan, "Nitrogen Implantation and Diffusion in Silicon," Mat. Res. Soc. Symp. Proc., 568, 277-281, 1999.

J. Li, P. Keys, J. Chen, M.E. Law, K.S. Jones, and Craig Jasper, "Transient Enhanced Diffusion of Phosphorus and Defect Evolution in P+ Implanted Si," Mat. Res. Soc. Symp. Proc., 568, 175-180, 1999.

P.H. Keys, J.H. Li, E. Heitman, P.A. Packan, M.E. Law, and K.S. Jones, "Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon," Mat. Res. Soc. Symp. Proc., 568, 199-204, 1999.

J. R. Shallenberger, D.A. Cole, S.W. Novak, R.L. Moore, M.J. Edgell, S.P. Smith, C.J. Hitzman, J.F. Kirchhoff, E. Principe, S. Biswas, R.J. Bleiler, W. Nieveen, K.S. Jones, "Oxide Thickness Determination by XPS, AES, SIMS, RBS, and TEM," 1998 International Conference Ion Implantation Technology Proceedings, 79-82, 1999.

H.J. Miller, C. Jasper, T.C. Smith, A. Hoover, K.S. Jones, "MeV Implanted Boron and Phosphorus Photoresist Penetration Tests," 1998 International Conference on Ion Implantation Technology Proceedings, 513-516, 1999.

C. Jasper, A. Hoover and K.S. Jones, "Defect Formation in MeV Ion Implantation of Boron and Phosphorus," 1998 International Conference Ion Implantation Technology Proceedings, 704-707, 1999.

Kevin S. Jones, Dan Downey, Holly Miller, Judy Chow, Jian Chen, Maggie Puga-Lambers, Kathryn Moller, Mike Wright, Erica Heitman, Josh Glassberg, Mark Law, Lance Robertson and Rich Brindos, "Transient Enhanced Diffusion in Low Energy Arsenic Implanted Silicon," 1998 International Conference on Ion Implantation Technology Proceedings, 841-844, 1999.

Daniel F. Downey, Kevin S. Jones, "The Role of Extended Defects on the Formation of Ultra-shallow Junctions in Ion Implanted 11B+, 49BF2, 75As+ and 31P+," 1998 International Conference Ion Implantation Technology Proceedings, 897-901, 1999.

E. Ishida, D. F. Downey, K. S. Jones, J. Liu, "The Chemical Effect of Fluorine on Boron Transient Enhanced Diffusion," 1998 International Conference on Ion Implantation Technology Proceedings, 909-912, 1999.

Jinning Liu, Daniel F. Downey, Kevin S. Jones, Emi Ishida, "Flourine Effect on Boron Diffusion: Chemical or Damage?" 1998 International Conference Ion Implantation Technology Proceedings, 951-954, 1999.

Qing Zhai, Jinghong Li, Jay Lewis, Karen Waldrip, Kevin Jones, Paul Holloway, M. Puga-Lambers, Mark Davidson, "Effects of Co-Dopants on the Microstructure and El Properties of the ZnS:Mn Luminescence Materials," Mat. Res. Soc. Symp. Proc., 560, 21-26, 1999.

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Conference Proceedings 1998

J. Liu, D.F. Downey, K.S. Jones & E. Ishida, "Fluorine effect on boron diffusion: chemical or damage?" Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 951-954, June 1998.

E. Ishida, D.F. Downey, K.S. Jones & J. Liu, "The chemical effect of fluorine on boron transient enhanced diffusion," Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 909-912, June 1998.

D.F. Downey & K.S. Jones, "The role of extended defects on the formation of ultra-shallow junctions in ion implanted 11B+,49BF2,76As+ and 31p+," Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 897-901, June 1998.

K.S. Jones, D. Downey, H. Miller, J. Chow, J. Chen, M. Puga-Lambers, K. Moller, M. Wright, E. Heitman, J. Glassberg, M. Law, L. Robertson & R. Brindos, "Transient enhanced diffusion in low energy arsenic implanted silicon," Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 841-844, June 1998.

C. Jasper, A. Hoover & K.S. Jones, "Defect formation in MeV ion implantation of boron and phosphorus," Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 704-707, June 1998.

H.J. Miller, C. Jasper, T.C. Smith, A. Hoover & K.S. Jones, "MeV implanted boron and phosphorus photoresist penetration tests," Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 1, p. 513-516, June 1998.

M.J. Caturla, A. Lilak, M.D. Johnson, M. Giles, T. Diaz de la Rubia, M. Law, & M. Foad, "Atomic scale modeling of boron transient diffusion in silicon," Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 1022-1025, June 1998.

K.S. Jones, D. Downey, H. Miller, J. Chow, J. Chen, M. Puga-Lambers, K. Moller, M. Wright, E. Heitman, J. Glassberg, M. Law, L. Robertson, & R. Brindos, "Transient enhanced diffusion in low energy arsenic implanted silicon," Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 841-844, June 1998.

Jing-Hong Li and Kevin S. Jones, "The Effect of a Thin Sample on the Extended Defect Evolution in Si+ Implanted Si," Mat. Res. Soc. Symp. Proc., 490, 47-60, 1998.

R. Raman, M.E. Law, V. Krishnamoorthy and K.S. Jones, "Effect of the End of Range Loop on the Evolution of {311} Defects," Mat. Res. Soc. Symp. Proc., 532, 61-66, 1998.

Michelle Griglione, Tim Anderson, Yaser Haddara, Mark Law and Kevin Jones, "Interdiffusion Behavior of Si/Si1-xGex Layers in Inert and Oxidizing Ambients," Mat. Res. Soc. Symp. Proc., 532, 119-124, 1998.

S. Bharatan, Y.M. Haddara, M.E. Law and K. S. Jones, "Determining of the Enthalpy of Formation of a Si Interstitial Using Quantitative TEM and SIMS," Mat. Res. Soc. Symp. Proc., 532, 111-118, 1998.

Aaron D. Lilak, Mark E. Law, Kevin S. Jones, Martin D. Giles, Ebrahim Andideh, Maria-Jose Caturla, Tomas Diaz de la Rubia, Jing Zhu and Silva Theiss, "Predictive Simulation of Transient Activation Processes in Boron-Doped Silicon," 1998 International Electron Device Meeting, 493-496, 1998

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Conference Proceedings 1997

R. Datta, L.P. Allen, R. Chandonnet, M. Farley & K.S. Jones, "Effect of varying implant energy and dose on the SIMOX microstructure," SOI Conference, 1997 Proceedings., 1997 IEEE International, p. 42-43, October 1997.

A.D. Lilak, S.K. Earles, K.S. Jones, M.E. Law, & M.D. Giles, "A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors," Electron Device Meeting, 1997. Technical Digest. International, p. 493-496, December 1997.

M.E. Law & M. Cerrato, "Improved local refinement algorithms for adaptive meshing of process simulation problems," Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97, 1997 International Conference on, p. 233-235, September 1997.

H.A. Rueda, S. Cea, & M.E. Law, "Mechanical stress modeling for silicon fabrication processes," Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97, 1997 International Conference on, p. 53-55, September 1997.

S. Brad Herner, Hans J. Gossman, Kevin S. Jones, and H. S. Luftman, "Investigation of Vacancy Generation in Silicon with a TiSi2 Film," MRS Proceedings, 469, 151, 1997.

V. Krishnamoorthy, Kevin S. Jones, and David Venables, J. Jackson "Effect of End-of-Range Defects, Arsenic Clustering and Precipitation on Transient Enhanced Diffusion in As+ Implanted Si," Mat. Res. Symp. Proc. 469, 401, 1997.

K.S. Jones, K. Moller, J. Chen, M. Puga-Lambers, M. Law, D.S. Simons, P. Chi, B. Freer, J. Bernstein, L. Rubin, R. Simonton, R.G. Elliman, M. Petravic, and P. Kringhoj, "The Effect of End of Range Loops on Transient Enhanced Diffusion in Si," IEEE Ion Implantation Technology Proceedings 96, 618-621, 1997.

J. Liu, V. Krishnamoorthy, K.S. Jones, M.E. Law, J. Shi, and J. Bennett, "Transient Enhanced Diffusion and Defect Studies in B Implanted Si," IEEE Ion Implantation Technology Proceedings 96, 626-629, 1997.

V. Krishnamoorthy, B. Beaudet, K.S. Jones and D. Venables, "Energy Dependence of Transient Enhanced Diffusion in Low Energy High Dose Arsenic Implants in Silicon," IEEE Ion Implantation Technology Proceedings, 96, 638-641, 1997.

A.D. Lilak, M.E. Law, K.S. Jones, M.D. Giles, "Modeling of transient enhanced diffusion of Boron Diffusion and Clustering Behaviors," International Electron Device Meeting, 493-496, 1997.

M.E. Law, K.S. Jones, S.K. Earles, A.D. Lilak, J.W. Xu, "Modeling of Extended Defects in Silicon," Microstructure Evolution During Irradiation, Eds. I.M. Robertson, G.S. Was, L.W. Hobbs, T. Diaz de la Rubia, Materials Research Society, 439, 3-10, 1997.

M.E. Law, K.S. Jones, S.K. Earles, A.D. Lilak, J.W. Xu, "Modeling of Extended Defects in Silicon," Materials Modeling and Synthesis by Ion Beam Processing Fall 1996 Proceedings, Eds. D.E. Alexander, N.W. Cheung, B. Park, W. Skorupa, Materials Research Society, 438, 45-52, 1997.

H.O. Dokumaci, H.-J. Gossman, K.S. Jones, M.E. Law, "An Investigation of Vacancy Population During Arsenic Activation in Silicon," Defects in Electronic Materials Fall 1996 Proceedings, Materials Research Society, 442, 151-156, 1997.

J. Desrouches, V. Krishnamoorthy, K.S. Jones and C. Jasper "Effect of Implant Energy on Silicon defect Evolution," Mat. Res. Soc. Symp.Proc., 469, 283-289, 1997.

D. Venables, V. Krishnamoorthy, H.-J. Gossman, A. Lilak, K.S. Jones and D.C. Jacobson, "The Role of Vacancies and Interstitials in Transient Enhanced Diffusion of Arsenic Implanted Into Silicon," Mat. Res. Soc. Symp. Proc., 469, 315-321, 1997.

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Conference Proceedings 1996

L.P. Allen, M. Farley, R. Datta, K.S. Jones, V. Krishnamoorthy, J.Y. Krska, J.U. Yoon & J.E. Chung, "Fundamental material analysis and SIMOX improvement as a function of independent implant parameter control," SOI Conference, 1996. Proceedings., 1996 IEEE International, p. 32-33, September 1996.

O. Dokumaci & M.E. Law, "An interpolation technique for the numerical solution of the rate equations in extended defect simulation," Simulation of Semiconductor Processes and Devices, 1996. SISPAD '96. 1996 International Conference on, p. 37-38, September 1996.

S. Cea & M. Law, "Three dimensional nonlinear viscoelastic oxidation modeling," Simulation of Semiconductor Processes and Devices, 1996. SISPAD '96. 1996 International Conference on, p. 97-98, September 1996.

V. Krishnamoorthy, B. Beaudet, K.S. Jones & D. Venables, "Energy dependence of transient-enhanced-diffusion in low energy high dose arsenic implants in silicon," Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 638-641, June 1996.

Jingwei Xu & M.E. Law, "A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon," Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 630-633, June 1996.

J. Liu, V. Krishnamoorthy, K.S. Jones, M.E. Law, J. Shi & J. Bennett, "Transient enhanced diffusion and defect studies in B implanted Si," Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 626-629, June 1996.

K.S. Jones, K. Moller, J. Chen, M. Puga-Lambers, M. Law, D.S. Simmons, P. Chi, B. Freer, J. Bernstein, L. Rubin, R. Simonton, R.G. Elliman, M. Petravic & P. Kringhoj, "The effect of end of range loops on transient enhanced diffusion in Si," Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 618-621, June 1996.

O. Dokumaci, M.E. Law, V. Krishnamoorthy, and K.S. Jones, "Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon," Mat. Res. Soc. Symp. Proc., 396, 167-172, 1996.

S.B. Herner, K.S. Jones, H.-J. Gossmann, R.T. Tung, J.M. Poate, and H.S. Luftman, "The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si," Proceedings of Spring Electrochem. Soc. Meeting, 96-4, 337-347, 1996.

M.E. Law and K.S. Jones, "{311} Defect Formation and Evolution for Si and B Implants," Proceedings of Spring Electrochem. Soc. Meeting, 96-4, 374-378, 1996.

K.S. Jones, J. Liu, and L. Zhang, "Evidence of Two Sources of Interstitial for TED in Boron Implanted Silicon," Proceedings of Spring Electrochem. Soc. Meeting, 96-4, 116-126, 1996.

V. Krishnamoorthy, D. Venables, K. Moeller, K.S. Jones, and B. Freer, "Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low-Energy High-Dose As+ Implanted Si," Mat. Res. Soc. Symp. Proc., 438, 21, 1996.

Mark E. Law, Kevin S. Jones, Aaron D. Lilak, and Susan K. Earles, "Models of Evolution of Damage From Ion Implantation into Silicon," MRS Proceedings, 438, 45, 1996.

S. Brad Herner, Kevin S. Jones, V. Krishnamoorthy, Toshi K. Mogi, Michael O. Thompson, and Hans J. Gossman, "Enhanced Dissolution of Extrinsic Dislocation Loops in Silicon With a Silicon Nitride Film," MRS Proceedings, 442, 157, 1996.

R. Datta, V. Krishnamoorthy, L.P. Allen, R. Chardonnet, M. Farley and K.S. Jones, "Effect of Oxygen Dose Variation on the SIMOX Microstructure," Mat. Res. Soc. Symp. Proc., 446, 207-212, 1996.

O.M. Kryliouk, T.W. Dann, T.J. Anderson, H.P. Maruska, L.D. Zhu, J.T. Daly, M. Lin, P. Norris, H.T. Chai, D.W. Kisker, J.H. Li, K.S. Jones, "MOCVD Growth of GaN Films on Lattice-Matched Oxide Substrates," Mat. Res. Soc. Symp. Proc., 449, 123-128, 1996.

Steve J. Pearton, S. Bendi, V. Krishnamoorthy, Kevin S. Jones, R.G. Wilson, Fan Ren, R.F. Karlicek, and R.A. Stall, "Hydrogen Diffusion and Passivation in GaN/InGaN Double Heterostructures," MRS Proceedings, 449, 993, 1996.

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Conference Proceedings 1995

H.P. Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J.E. Yu, B. Pathangey, K.S. Jones, and T.J. Anderson, "Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD," Mat. Res. Soc. Symp. Proc., 358, 987-992, 1995.

P.H. Holloway, J.J. Fijol, R.M. Park, L.C. Calhoun, K.S. Jones, J.H. Simmons, P. Zory and T.J. Anderson, "Growth, Doping and Electrical Contacts to ZnSe-Based Devices," The Electrochemical Society, 94-34, 2-11, 1995.

R.H. Thompson, Jr., V. Krishnamoorthy, J. Liu and K.S. Jones, "Type II Dislocation Loops and Their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-Ray Diffraction," Mat. Res. Soc. Symp. Proc., 378, 635-640, 1995.

K.S. Jones and M.J. Antonell, "The Effects of Rapid Recrystallization and Ion Implanted Carbon on the Solid Phase Epitaxial Regrowth of Si1-xGex Alloy Layers on Silicon," Mat. Res. Soc. Symp. Proc., 379, 453-459, 1995.

J. Liu and K.S. Jones, "A Study of Loop Evolution During Inert Ambient Annealing and Reaction Between Point Defects and Dislocation Loops During Oxidation of Silicon," Mat. Res. Soc. Symp. Proc., 354, 293-298, 1995

J. Liu and K.S. Jones, "Evolution of Dislocation Loops in Si in an Inert Ambient," Solid State Electronics, 38, 1305-1312, 1995.

S.B. Herner, H.-J. Gossmann, K.S. Jones, "Titanium Silicidation Induced Point Defects in Si," Mat. Res. Soc. Symp. Proc., 402, 143-148, 1995.

S. Chaudhry, R. Thompson, K.S. Jones and M.E. Law, "A Two-Dimensional Model of Strain from Dislocation Loops in Ion Implanted Silicon," Extended Abstracts of the Spring Electrochemical Society, 448-449, 1995.

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Conference Proceedings 1994

Minchang Liang & M.E. Law, "The importance of including lattice self-heating and hot-carrier transport in BJT simulation," Bipolar/BiCMOS Circuits and Technology Meeting, 1994., Proceedings of the 1994, 187-190, October 1994.

S. Cea & M.E. Law, "Two dimensional simulation of silicide growth and flow," Numerical Modeling of Processes and Devices for Integrated Circuits, 1994., NUPAD V., International Workshop on, 113-116, June 1994.

Chih-Chuan Lin & M.E. Law, "Mesh adaption and flux discretizations for dopant diffusion modeling," Numerical Modeling of Processes and Devices for Integrated Circuits, 1994., NUPAD V., International Workshop on, 151-154, June 1994.

K.S. Jones, H.G. Robinson, C. Jasper, W. Cronin and M. Durlam, "TEM Analysis of Interfacial Reactions Between Ti-W-N, W-N Gate Metalizations and GaAs in MESFET Devices," Mat. Res. Soc. Symp. Proc., 319, 81-86, 1994.

C. Jasper, S. Klingbeil, K.S. Jones and H.G. Robinson, "The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide," Mat. Res. Soc. Symp. Proc., 316, 337-342, 1994.

H.G. Robinson and K.S. Jones, "The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in GaAs," Mat. Res. Soc. Symp. Proc., 316, 3?7-343, 1994.

J. Chen, H.G. Robinson, S.B. Herner and K.S. Jones, "Effect of Oxygen on Point Defect Injection During Silicidation of Titanium," Seventh International Symposium on Silicon Materials Science and Technology, Proceeding of the Electrochemical Society, 94-10, 1029-1040, 1994.

S. Bharatan, K.S. Jones, S.J. Pearton, C.R. Abernathy, and F. Ren, "Structural Characterization of GaN Grown by Electron Cyclotron Resonance-Metalorganic Molecular Beam Epitaxy (ECR-MOMBE)," Mat. Res. Soc. Symp. Proc., 339, 491-496, 1994.

J. Chen, H.G. Robinson, S.B. Herner and K.S. Jones, "The Influence of Oxygen on the Kinetics of Dislocation Loops During Silicidation," Mat. Res. Soc. Symp. Proc., 337, 491-496, 1994.

J.R. Kim, R.M. Park, and K.S. Jones, "Thermal Expansion Behavior of ZnSe and ZnS0.03Se0.97 Epilayers on GaAs at Temperatures in the Range, 25oC - 250oC," Mat. Res. Soc. Symp. Proc., 340, 475-480, 1994.

P.H. Holloway, J.E. Yu, P. Rack, J. Sebastian, S. Jones, T. Trottier, K.S. Jones, B. Pathangey, T.J. Anderson, S.-S. Sun, R. Tuenge, E. Dickey and C.N. King, "Blue and Yellow Light Emitting Phosphors for Thin Film Electroluminescent Displays," Mat. Res. Soc. Symp. Proc., 345, 289-298, 1994.

S.B. Herner, V. Krishnamoorthy, H.G. Robinson and K.S. Jones, "The Effect of Titanium Silicidation on Type II End-of-Range Dislocation Loops," Mat. Res. Soc. Symp. Proc., 337, 469-473, 1994.

H.G. Robinson, C.C. Lee, M.D. Deal, T.E. Haynes, E.L. Allen, and K.S. Jones, "Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature," Mat. Res. Soc. Symp. Proc., 354, 337-342, 1994.

C.J. Santana, C.R. Abernathy, S.J. Pearton, and K.S. Jones, "MOMBE Growth of GaP-Based Materials on Si: Surface Preparation and Nucleation," Mat. Res. Soc. Symp. Proc., 357, 1994.

J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, S. Bharatan, and K.S. Jones, "AlN Grown by Metalorganic Beam Epitaxy Using ECR Nitrogen Plasma Source," Mat. Res. Soc. Symp. Proc., 363, 213-218, 1994.

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Conference Proceedings 1993

T.E. Haynes, C. Lee, and K.S. Jones, "Time-Resolved Reflectivity Study of Solid Phase Epitaxial Regrowth in Relaxed and Strained Si1-xGex Epilayers," Mat. Res. Soc. Symp. Proc., 281, 479-484, 1993.

P.W. Wisk, C.R. Abernathy, S.J. Pearton, A. Katz, F. Ren, J.R. Lothian and K.S. Jones, "Growth of GaN, AlN and InN by Metalorganic Molecular Beam Epitaxy Using ECR Generated Nitrogen Plasmas," Mat. Res. Soc. Symp. Proc., 282, 599-604, 1993.

K.S. Jones, H.L. Meng, B. Zhu, H.G. Robinson, M.E. Law and S. Prussin, "Using Implantation Induced Dislocation Loops as Detectors of Interstitial Injection During Oxidation of Silicon," Proceedings of the International Conference on Beam Processing of Advanced Materials, TMS/ASM International, Materials Park, OH, 73, 697-704, 1993.

J.E. Yu, K.C. Chou, B. Pathangey, K.S. Jones and T.J. Anderson, "Characteristics of In0.5Ga0.5P/GaAs Grown at High Temperature Using Low-Pressure MOVPE," Mat. Res. Soc. Symp. Proc., 312, 1993.

H.L. Meng, J. Chen, H.G. Robinson, M.E. Law, J.A. Slinkman and K.S. Jones, "Using Oxidation to Study the Reaction Between Point Defects and Dislocation Loops," Proceedings of the Electrochem. Soc., 93-6, 236-42, 1993.

H. Park, K.S. Jones, Slinkman, J.A. and Law, M.E., "The Effects of Strain on Dopant Diffusion in Silicon," Technical Digest of the International Electron Devices Meeting, 303-306, December 1993.

K.S. Jones, H.G. Robinson, T.E. Haynes, M.D. Deal, C.C. Lee and E.L. Allen, "Defects and Diffusion in Si+ Implanted GaAs," Mat. Res. Soc. Symp. Proc., 300, 323-330, 1993.

H.G. Robinson, K.S. Jones, M.D. Deal and C.J. Hu, "Time Dependent Diffusion of p-Type Dopants in GaAs," Mat. Res. Soc. Symp. Proc., 300, 397-408, 1993.

K.S. Jones, J. Listebarger, J. Liu, H.L. Meng, M.E. Law and J.A. Slinkman, "Developing Dislocation Loops as Point Defect Detectors in Silicon," 3rd International Symposium on Process Physics and Modeling, Honolulu, ed. Srinavasen, Taniguchi, and Murthy, ECS Press, 236-242, 1993.

K.S. Jones, J. Listebarger, J. Liu, M. Meng, M.E. Law, and J.A. Slinkman, "Developing Dislocation Loops as Point Defect Detectors in Silicon," Spring Electrochemical Society Proceeding, Honolulu, 1043, 1993

T.E. Haynes, C. Lee, and K.S. Jones, "Time-Resolved Reflectivity Study of Solid Phase Epitaxial Regrowth in Relaxed and Strained Si1-xGex Epilayers," Mat. Res. Soc. Symp. Proc., 281, 479-484, 1993.

P.W. Wisk, C.R. Abernathy, S.J. Pearton, A. Katz, F. Ren, J.R. Lothian and K.S. Jones, "Growth of GaN, AlN and InN by Metalorganic Molecular Beam Epitaxy Using ECR Generated Nitrogen Plasmas," Mat. Res. Soc. Symp. Proc., 282, 599-604, 1993.

K.S. Jones, H.L. Meng, B. Zhu, H.G. Robinson, M.E. Law and S. Prussin, "Using Implantation Induced Dislocation Loops as Detectors of Interstitial Injection During Oxidation of Silicon," Proceedings of the International Conference on Beam Processing of Advanced Materials, TMS/ASM International, Materials Park, OH, 73, 697-704, 1993.

J.E. Yu, K.C. Chou, B. Pathangey, K.S. Jones and T.J. Anderson, "Characteristics of In0.5Ga0.5P/GaAs Grown at High Temperature Using Low-Pressure MOVPE," Mat. Res. Soc. Symp. Proc., 312, 1993.

H.L. Meng, J. Chen, H.G. Robinson, M.E. Law, J.A. Slinkman and K.S. Jones, "Using Oxidation to Study the Reaction Between Point Defects and Dislocation Loops," Proceedings of the Electrochem. Soc., 93-6, 236-42, 1993.

H. Park, K.S. Jones, Slinkman, J.A. and Law, M.E., "The Effect of Strain on Dopant Diffusion in Silicon," Technical Digest of the International Electron Devices Meeting, 303-306, 1993.

K.S. Jones, H.G. Robinson, T.E. Haynes, M.D. Deal, C.C. Lee and E.L. Allen, "Defects and Diffusion in Si+ Implanted GaAs," Mat. Res. Soc. Symp. Proc., 300, 323-330, 1993.

H.G. Robinson, K.S. Jones, M.D. Deal and C.J. Hu, "Time Dependent Diffusion of p-Type Dopants in GaAs," Mat. Res. Soc. Symp. Proc., 300, 397-408, 1993.

K.S. Jones, J. Listebarger, J. Liu, H.L. Meng, M.E. Law and J.A. Slinkman, "Developing Dislocation Loops as Point Defect Detectors in Silicon," 3rd International Symposium on Process Physics and Modeling, Honolulu, ed. Srinavasen, Taniguchi, and Murthy, ECS Press, 236-242, 1993.

K.S. Jones, J. Listebarger, J. Liu, M. Meng, M.E. Law, and J.A. Slinkman, "Developing Dislocation Loops as Point Defect Detectors in Silicon," Spring Electrochemical Society Proceeding, Honolulu, 1043, 1993.

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Conference Proceedings 1992

P. Novell & M.E. Law, "The Effect of Nondilute Dopant-Defect Pair Concentrations on Arsenic Diffusion," Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 41-44, June 1992.

M.D. Giles, G.R. Chin, M.E. Law & L.R. Nackman, "Representing and Manipulating Fields for TCAD," Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 207-212, June 1992.

Chih-Chuan Lin, M.E. Law & R.E. Lowther, "Automatic Grid Refinement and Higher Order Flux Discretizations for Diffusion Modeling," Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 191-196, June 1992.

D. Bonning, G. Chin, R. Cottle, W. Dietrich, S. Duvall, M. Giles, R. Harris, M. Karasick, N. Khalil, M. Law, M.J. McLennan, P.K. Mozumder, L. Nackman, S. Nassif, V.T. Rajan, D. Schroeder, R. Tremain, D.M.H. Walker, R. Wang & A. Wong, "Developing and Integrating TCAD Applications with the Semiconductor Wafer Representation," Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 199-204, June 1992.

D. Venables, K.S. Jones, F. Namavar and J.M. Manke, "Strain Relief and Defect Formation in High-Dose Oxygen Implanted Silicon," Mat. Res. Soc. Symp. Proc., 235, 103-108, 1992.

H.L. Meng, K.S. Jones and S. Prussin, "Oxidation-Induced Point Defects in Silicon," Mat. Res. Soc. Symp. Proc., 238, 1992.

K.S. Jones, "Ion Implantation Related Defects in GaAs," Mat. Res. Soc. Symp. Proc., 240, 785-796, 1992.

A. Feingold, A. Katz, S.J. Pearton, U.K. Chakrabarti and K.S. Jones, "Rapid Growth Kinetics, Mechanical Properties and Thermal Stability of SiOx Thin Films Grown by Rapid Thermal Low Pressure Chemical Vapor Deposition," Mat. Res. Soc. Symp. Proc., 240, 425-430, 1992.

J.E. Yu, K.S. Jones, J. Fang, P.H. Holloway, B. Pathangey, E. Bretschneider and T.J. Anderson, "Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL) Devices," Mat. Res. Soc. Symp. Proc., 242, 215-220, 1992.

H.G. Robinson, D.A. Stevenson, M.D. Deal and K.S. Jones, "Correlation of Dislocation Loop Formation and Time-Dependent Diffusion of Implanted p-Type Dopants in Gallium Arsenide," Mat. Res. Soc. Symp. Proc., 240, 715-720, 1992.

C. Lee and K.S. Jones, "Solid-Phase Epitaxial Regrowth of Implantation Amorphized Si0.7Ge0.3 Grown on <100> Silicon," Mat. Res. Soc. Symp. Proc., 235, 57-63, 1992.

H.L. Meng and K.S. Jones, "Dislocation Loops as Quantitative Point Defects Detectors in Si," Mat. Res. Soc. Symp. Proc., 1992.

J.E. Yu, J. Fan, E. Bretschneider, B. Pathangey, K.S. Jones, T.J. Anderson and P.H. Holloway, "A Study of Nucleation of ZnS Thin Layers Grown by Low-Pressure OMCVD for Thin Film Electroluminescence (TFEL) Devices," Mat. Res. Soc. Symp. Proc., 263, 1992.

H.L. Meng, S. Prussin and K.S. Jones, "Point Defect Detector Studies of Ge+ Implanted Silicon Upon Oxidation," Mat. Res. Soc. Symp. Proc., 262, 253-257, 1992.

H.L. Meng, K.S. Jones and S. Prussin, "Point Defect Detector Studies of Oxidized Silicon," Mat. Res. Soc. Symp. Proc., 238, 101-106, 1992.

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Conference Proceedings 1991

S.J. Pearton, B. Jalali, J.M. Poate, C.W. Magee and K.S. Jones, "Characteristics of 56 MeV O+ Implantation into Si and III-V Semiconductors," Mat. Res. Soc. Symp. Proc., 201, 271-276, 1991.

C. Lee and K.S. Jones, "Solid-Phase Epitaxial Regrowth of Si0.7Ge0.3 On Si," Ceramic Transactions, 19, 321-331, 1991.

P.D. Lowen, K.S. Jones, R. Ochoa, J. Simmons, Y.H. Wang, R.M. Park and R.G. Wilson, "Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing," Mat. Res. Soc. Symp. Proc., 224, 467-472, 1991.

A.Deneuville, P. Ayyub, C.H. Park, T. Anderson, P. Lowen, K.S. Jones and P.H. Holloway, "Raman Studies of ZnSe Lattice Damage and Recovery Due to N Implantation and Annealing," Mat. Res. Soc. Symp. Proc., 209, 457-462, 1991.

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Conference Proceedings 1990

M.E. Law, "Parameters For Point Defect Diffusion and Recombination," Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on, p. 9-10, June 1990.

W.S. Rubart, K.S. Jones, L. Seiberling and D.K. Sadana, "Low Energy Implantation of Si and Sn into GaAs," Mat. Res. Soc. Symp. Proc., 157, 677-682, 1990.

K.S. Jones, "Amorphization of Elemental and Compound Semiconductors," in "Ion Implantation of Semiconductors," eds., K.S. Jones and S.J. Pearton, (ECS Press, Pennington, NJ), 90-13, 230-256, 1990.

D. Venables and K.S. Jones, "Dislocation Deflection and Reduction in Ge Implanted SIMOX Wafers," in "Ion Implantation of Semiconductors," eds., K.S. Jones and S.J. Pearton, (ECS Press, Pennington, NJ), 90-13, 257-260, 1990.

S.J. Pearton, U.K. Chakraberti, W.S. Hobson, F.A. Baiocchi and K.S. Jones, "Ion Beam Induced Damage in RIE GaAs, AlGaAs, and InP," Proceedings of the Electrochemical Society Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors 90-13, 130-142, 1990.

S.J. Pearton, W.S. Hobson and K.S. Jones, "Elevated Temperature RIE of GaAs and AlGaAs in C2H6/H2," Mat. Res. Soc. Symp. Proc., 158, 425-430, 1990.

Y.H. Wang, H.S. Chen, S.S. Li, K.S. Jones, P. Lowen, and D. Kisker, "Defect and Electrical Characterization of OMVPE Grown ZnSe on GaAs Implanted with High Doses of Lithium and Nitrogen," Proceedings of Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors, 1990.

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Conference Proceedings 1989

K.S. Jones, J. Yu, P.D. Lowen and D. Kisker, "Observation of the Wurtzite Phase in OMPVE Grown ZnSe: Effect on Implantation and Rapid Thermal Annealing," Mat. Res. Soc. Symp. Proc., 147, 339-344, 1989.

S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, K.T. Short, A.E. White and K.S. Jones, "Rapid Annealing of RIE Induced Damage in GaAs and AlGaAs," Mat. Res. Soc. Symp. Proc., 146, 339-404, 1989

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Conference Proceedings 1988

M.E. Law, J.R. Pfiester & R.W. Dutton, "The effect of implantation damage on arsenic/phosphorus codiffusion," Electron Devices Meeting, 1988. Technical Digest., International. p. 640-643, December 1988.

K.S. Jones, D. Venables, C.R. Horne & G. Davis, "Enhanced elimination of extended defects associated with P+ and Ga+ implantation of SIMOX," SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE, p. 49, October 1988.

S. Prussin and K.S. Jones, "Role of Ion Mass and Implant Dose on End of Range Defects," Proceedings of the First International Symposium on Advanced Materials for ULSI, ed., M.D. Scott, (ECS Press, Pennington, NJ), 88-19, 95-102, 1988.

S.J. Pearton, K.T. Short, K.S. Jones and S.M. Vernon, "Activation and Interdiffusion Characteristics in Implanted GaAs-AlGaAs Heterostructures on Si," Mat. Res. Soc. Symp. Proc., 126, 97-103, 1988.

S.J. Pearton, K.S. Jones, K.T. Short, C.R. Abernathy, R. Caruso, S.N.G. Chu and S.M. Vernon, "Characterization of GaAs-AlGaAs Heterostructures Grown on Si by MOCVD," Proceedings of the First International Symposium on Advanced Materials for ULSI, ed., M.D. Scott, (ECS Press, Pennington, NJ), 88-19, 95-102, 1988.

K.S. Jones, D. Venables, C.R. Horne and G. Davis, "Ion Implantation Doping of SIMOX with 31P and 69Ga," Mat. Res. Soc. Symp. Proc., 128, 617--622, 1988.

W.S. Hobson, S.J. Pearton, K.T. Short, K.S. Jones, S.M. Vernon, D.C. Jacobson, C.R. Abernathy and R. Caruso, "Growth and Characterization of GaAs-Based Superlattices on Si by MOCVD," Mat. Res. Soc. Symp. Proc., 116, 147-153, 1988.

S.J. Pearton, K.T. Short, K.S. Jones, W.S. Hobson, M.J. Vasile, B. Emerson, E.O. Lane, T.R. Fullowan, A.E. Von Neida and N.M. Haegel, "Temperature Dependence of Etch Rate and Residual Damage in Reactively Ion Etched GaAs and AlGaAs," Mat. Res. Soc. Symp. Proc., 129, 489-494, 1988.

S.J. Pearton, K.T. Short, K.S. Jones and A.G. Baca, "Ion Beam Induced Intermixing of WSiO.45 on GaAs," Mat. Res. Soc. Symp. Proc., 128, 249-254, 1988.

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Conference Proceedings 1987

G.E. Davis, S. Prussin and K.S. Jones, "Nitrogen Contamination in SIMOX Wafers," in "Silicon-on-Insulator and Buried Metals in Semiconductors," Mat. Res. Soc. Symp. Proc., 107, 111-116, 1987.

K.S. Jones, S. Prussin and D. Venables, "The Effect of Implant Species on the Stability of Ion Implantation Damage," Mat. Res. Soc. Symp. Proc., 100, 277-282, 1987.

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Conference Proceedings 1986

S. Prussin and K.S. Jones, "Role of Implant Energy on Defect Structures for Phosphorous Implanted Silicon," Mat. Res. Soc. Symp. Proc., 71, 191-195, 1986.

K.S. Jones and S. Prussin, "Defect Structures Generated by Buried Amorphous Layer Regrowth in <100> Arsenic Implanted Silicon," Mat. Res. Soc. Symp. Proc., 71, 173-179, 1986.

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